Ultraviolet photoresponse of ZnO nanostructured AlGaN/GaN HEMTs

Salahuddin Dogar, Waqar Khan, Sam Dong Kim

Research output: Contribution to journalArticleScientificpeer-review

22 Citations (Scopus)

Abstract

We present the first active visible blind ultraviolet (UV) photodetector based on zinc oxide (ZnO) nanostructured AlGaN/GaN high electron mobility transistors (HEMTs). The ZnO nanorods (NRs) are selectively grown on the gate area by using hydrothermal method. It is shown that ZnO nanorod (NR)-gated UV detectors exhibit much superior performance in terms of response speed and recovery time to those of seed-layer-gated detectors. It is also found that the best response speed (∼10 and∼190 ms) and responsivity (~1.1×105 A/W) were observed from detectors of the shortest gate length of 2 μm among our NR-gated devices of three different gate dimensions, and this responsivity is about one order higher than the best performance of ZnO NR-based UV detectors reported to date.

Original languageEnglish
Pages (from-to)71-77
JournalMaterials Science in Semiconductor Processing
Volume44
DOIs
Publication statusPublished - 15 Mar 2016
MoE publication typeA1 Journal article-refereed

Keywords

  • AlGaN/GaN HEMT
  • Gate length effect
  • High responsivity
  • Response speed
  • UV detector
  • ZnO nanorods

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