Ultraviolet photoresponse of ZnO nanostructured AlGaN/GaN HEMTs

Salahuddin Dogar; Waqar Khan; Sam Dong Kim

doi:10.1016/j.mssp.2016.01.004

Ultraviolet photoresponse of ZnO nanostructured AlGaN/GaN HEMTs

Salahuddin Dogar, Waqar Khan, Sam Dong Kim

Not published at VTT

Dongguk University

Research output: Contribution to journal › Article › Scientific › peer-review

22 Citations (Scopus)

Abstract

We present the first active visible blind ultraviolet (UV) photodetector based on zinc oxide (ZnO) nanostructured AlGaN/GaN high electron mobility transistors (HEMTs). The ZnO nanorods (NRs) are selectively grown on the gate area by using hydrothermal method. It is shown that ZnO nanorod (NR)-gated UV detectors exhibit much superior performance in terms of response speed and recovery time to those of seed-layer-gated detectors. It is also found that the best response speed (∼10 and∼190 ms) and responsivity (~1.1×10⁵ A/W) were observed from detectors of the shortest gate length of 2 μm among our NR-gated devices of three different gate dimensions, and this responsivity is about one order higher than the best performance of ZnO NR-based UV detectors reported to date.

Original language	English
Pages (from-to)	71-77
Journal	Materials Science in Semiconductor Processing
Volume	44
DOIs	https://doi.org/10.1016/j.mssp.2016.01.004
Publication status	Published - 15 Mar 2016
MoE publication type	A1 Journal article-refereed

Keywords

AlGaN/GaN HEMT
Gate length effect
High responsivity
Response speed
UV detector
ZnO nanorods

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10.1016/j.mssp.2016.01.004

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title = "Ultraviolet photoresponse of ZnO nanostructured AlGaN/GaN HEMTs",

abstract = "We present the first active visible blind ultraviolet (UV) photodetector based on zinc oxide (ZnO) nanostructured AlGaN/GaN high electron mobility transistors (HEMTs). The ZnO nanorods (NRs) are selectively grown on the gate area by using hydrothermal method. It is shown that ZnO nanorod (NR)-gated UV detectors exhibit much superior performance in terms of response speed and recovery time to those of seed-layer-gated detectors. It is also found that the best response speed (∼10 and∼190 ms) and responsivity (~1.1×105 A/W) were observed from detectors of the shortest gate length of 2 μm among our NR-gated devices of three different gate dimensions, and this responsivity is about one order higher than the best performance of ZnO NR-based UV detectors reported to date.",

keywords = "AlGaN/GaN HEMT, Gate length effect, High responsivity, Response speed, UV detector, ZnO nanorods",

author = "Salahuddin Dogar and Waqar Khan and Kim, {Sam Dong}",

note = "Funding Information: This work was supported by the basic science research program (grant number 2012001298) through the National Research foundation of Korea funded by Ministry of Education. The Authors would like to thank Dr. Soo Min Kim, Sujeong Jeong and professor Dong Hwan Kim at Korea University for their support to measure the spectral responses of the devices. Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd. All rights reserved.",

year = "2016",

month = mar,

day = "15",

doi = "10.1016/j.mssp.2016.01.004",

language = "English",

volume = "44",

pages = "71--77",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier",

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T1 - Ultraviolet photoresponse of ZnO nanostructured AlGaN/GaN HEMTs

AU - Dogar, Salahuddin

AU - Khan, Waqar

AU - Kim, Sam Dong

N1 - Funding Information: This work was supported by the basic science research program (grant number 2012001298) through the National Research foundation of Korea funded by Ministry of Education. The Authors would like to thank Dr. Soo Min Kim, Sujeong Jeong and professor Dong Hwan Kim at Korea University for their support to measure the spectral responses of the devices. Publisher Copyright: © 2016 Elsevier Ltd. All rights reserved.

PY - 2016/3/15

Y1 - 2016/3/15

N2 - We present the first active visible blind ultraviolet (UV) photodetector based on zinc oxide (ZnO) nanostructured AlGaN/GaN high electron mobility transistors (HEMTs). The ZnO nanorods (NRs) are selectively grown on the gate area by using hydrothermal method. It is shown that ZnO nanorod (NR)-gated UV detectors exhibit much superior performance in terms of response speed and recovery time to those of seed-layer-gated detectors. It is also found that the best response speed (∼10 and∼190 ms) and responsivity (~1.1×105 A/W) were observed from detectors of the shortest gate length of 2 μm among our NR-gated devices of three different gate dimensions, and this responsivity is about one order higher than the best performance of ZnO NR-based UV detectors reported to date.

AB - We present the first active visible blind ultraviolet (UV) photodetector based on zinc oxide (ZnO) nanostructured AlGaN/GaN high electron mobility transistors (HEMTs). The ZnO nanorods (NRs) are selectively grown on the gate area by using hydrothermal method. It is shown that ZnO nanorod (NR)-gated UV detectors exhibit much superior performance in terms of response speed and recovery time to those of seed-layer-gated detectors. It is also found that the best response speed (∼10 and∼190 ms) and responsivity (~1.1×105 A/W) were observed from detectors of the shortest gate length of 2 μm among our NR-gated devices of three different gate dimensions, and this responsivity is about one order higher than the best performance of ZnO NR-based UV detectors reported to date.

KW - AlGaN/GaN HEMT

KW - Gate length effect

KW - High responsivity

KW - Response speed

KW - UV detector

KW - ZnO nanorods

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U2 - 10.1016/j.mssp.2016.01.004

DO - 10.1016/j.mssp.2016.01.004

M3 - Article

AN - SCOPUS:84954461426

VL - 44

SP - 71

EP - 77

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

ER -

Ultraviolet photoresponse of ZnO nanostructured AlGaN/GaN HEMTs

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Keywords

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