TY - JOUR
T1 - Ultrawide-band Low Polarization Sensitivity 3-μm SOI Arrayed Waveguide Gratings
AU - Wang, Yu
AU - Bhat, Srivathsa
AU - Tessema, Netsanet Merawi
AU - Kraemer, Rafael
AU - Napoli, Antonio
AU - Delrosso, Giovanni
AU - Calabretta, Nicola
N1 - Funding Information:
This work was supported in part by the European Union's research and innovation programme Marie Sklodowska-Curie under Grant 814276 and in part by the European Union's Horizon 2020 B5G-OPEN under Grant 101016663.
Publisher Copyright:
© 1983-2012 IEEE.
PY - 2022/4/19
Y1 - 2022/4/19
N2 - An ultrawide-band (UWB), O- to L- band, polarization insensitive (PI) 1 × 12 100 GHz channel spacing arrayed waveguide grating (AWG) is designed and realized in 3-μm Silicon-on-Insulator (SOI) platform. PI and UWB operations are achieved by directly exploiting the UWB 3-μm PI silicon waveguide as the arrayed waveguide. The PI AWG can be employed as demultiplexer and multiplexer in photonic integrated circuits (PIC)s, such as UWB wavelength selective switches (WSS)s. Experimental results demonstrate UWB (O- to L- band) and PI 1 × 12 AWG operation with -0.82 dB to -1.52 dB insertion losses, <-35 dB average cross-talk, 0.18 dB to 1.27 dB polarization dependent loss (PDL), and 0.006 nm to 0.041 nm polarization dependent wavelength shift (PDWS). Error-free operation at 10-9 BER were measured with power penalties <0.1 dB, <0.2 dB, and <0.8 dB for 10 Gb/s, 20 Gb/s and 35 Gb/s NRZ-OOK PRBS 231-1 multi-band data, respectively.
AB - An ultrawide-band (UWB), O- to L- band, polarization insensitive (PI) 1 × 12 100 GHz channel spacing arrayed waveguide grating (AWG) is designed and realized in 3-μm Silicon-on-Insulator (SOI) platform. PI and UWB operations are achieved by directly exploiting the UWB 3-μm PI silicon waveguide as the arrayed waveguide. The PI AWG can be employed as demultiplexer and multiplexer in photonic integrated circuits (PIC)s, such as UWB wavelength selective switches (WSS)s. Experimental results demonstrate UWB (O- to L- band) and PI 1 × 12 AWG operation with -0.82 dB to -1.52 dB insertion losses, <-35 dB average cross-talk, 0.18 dB to 1.27 dB polarization dependent loss (PDL), and 0.006 nm to 0.041 nm polarization dependent wavelength shift (PDWS). Error-free operation at 10-9 BER were measured with power penalties <0.1 dB, <0.2 dB, and <0.8 dB for 10 Gb/s, 20 Gb/s and 35 Gb/s NRZ-OOK PRBS 231-1 multi-band data, respectively.
KW - arrayed waveguide grating
KW - Arrayed waveguide gratings
KW - multi-band optical communication
KW - Optical device fabrication
KW - Optical fibers
KW - Optical polarization
KW - Optical waveguides
KW - Photonic integrated circuits
KW - photonics filters
KW - Ribs
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=85128586017&partnerID=8YFLogxK
U2 - 10.1109/JLT.2022.3167829
DO - 10.1109/JLT.2022.3167829
M3 - Article
AN - SCOPUS:85128586017
SN - 0733-8724
VL - 40
SP - 3432
EP - 3441
JO - Journal of Lightwave Technology
JF - Journal of Lightwave Technology
IS - 11
ER -