Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells

Antti Tukiainen (Corresponding Author), Jari Likonen, Lauri Toikkanen, Tomi Leinonen

    Research output: Contribution to journalArticleScientificpeer-review

    8 Citations (Scopus)


    The effects of unintentional boron contamination on optical properties of GaInP/AlGaInP quantum well structures grown by molecular beam epitaxy (MBE) are reported. Photoluminescence and secondary-ion mass spectrometry (SIMS) measurements revealed that the optical activity of boron-contaminated quantum wells is heavily affected by the amount of boron in GaInP/AlGaInP heterostructures. The boron concentration was found to increase when cracking temperature of the phosphorus source was increased. Boron incorporation was enhanced also when aluminum was present in the material.

    Original languageEnglish
    Pages (from-to)60-63
    Number of pages4
    JournalJournal of Crystal Growth
    Publication statusPublished - 28 Jul 2015
    MoE publication typeNot Eligible


    • Defects
    • Impurities
    • Molecular beam epitaxy
    • Phosphides
    • Semiconducting III-V materials


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