Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells

Antti Tukiainen; Jari Likonen; Lauri Toikkanen; Tomi Leinonen

doi:10.1016/j.jcrysgro.2015.02.048

Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells

Antti Tukiainen^*
, Jari Likonen
, Lauri Toikkanen
, Tomi Leinonen

^*Corresponding author for this work

Tampere University of Technology (TUT)

Research output: Contribution to journal › Article › Scientific › peer-review

9 Citations (Scopus)

Abstract

The effects of unintentional boron contamination on optical properties of GaInP/AlGaInP quantum well structures grown by molecular beam epitaxy (MBE) are reported. Photoluminescence and secondary-ion mass spectrometry (SIMS) measurements revealed that the optical activity of boron-contaminated quantum wells is heavily affected by the amount of boron in GaInP/AlGaInP heterostructures. The boron concentration was found to increase when cracking temperature of the phosphorus source was increased. Boron incorporation was enhanced also when aluminum was present in the material.

Original language	English
Pages (from-to)	60-63
Journal	Journal of Crystal Growth
Volume	425
DOIs	https://doi.org/10.1016/j.jcrysgro.2015.02.048
Publication status	Published - 28 Jul 2015
MoE publication type	Not Eligible

Keywords

Defects
Impurities
Molecular beam epitaxy
Phosphides
Semiconducting III-V materials

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10.1016/j.jcrysgro.2015.02.048

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title = "Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells",

abstract = "The effects of unintentional boron contamination on optical properties of GaInP/AlGaInP quantum well structures grown by molecular beam epitaxy (MBE) are reported. Photoluminescence and secondary-ion mass spectrometry (SIMS) measurements revealed that the optical activity of boron-contaminated quantum wells is heavily affected by the amount of boron in GaInP/AlGaInP heterostructures. The boron concentration was found to increase when cracking temperature of the phosphorus source was increased. Boron incorporation was enhanced also when aluminum was present in the material.",

keywords = "Defects, Impurities, Molecular beam epitaxy, Phosphides, Semiconducting III-V materials",

author = "Antti Tukiainen and Jari Likonen and Lauri Toikkanen and Tomi Leinonen",

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day = "28",

doi = "10.1016/j.jcrysgro.2015.02.048",

language = "English",

volume = "425",

pages = "60--63",

journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells

AU - Tukiainen, Antti

AU - Likonen, Jari

AU - Toikkanen, Lauri

AU - Leinonen, Tomi

PY - 2015/7/28

Y1 - 2015/7/28

N2 - The effects of unintentional boron contamination on optical properties of GaInP/AlGaInP quantum well structures grown by molecular beam epitaxy (MBE) are reported. Photoluminescence and secondary-ion mass spectrometry (SIMS) measurements revealed that the optical activity of boron-contaminated quantum wells is heavily affected by the amount of boron in GaInP/AlGaInP heterostructures. The boron concentration was found to increase when cracking temperature of the phosphorus source was increased. Boron incorporation was enhanced also when aluminum was present in the material.

AB - The effects of unintentional boron contamination on optical properties of GaInP/AlGaInP quantum well structures grown by molecular beam epitaxy (MBE) are reported. Photoluminescence and secondary-ion mass spectrometry (SIMS) measurements revealed that the optical activity of boron-contaminated quantum wells is heavily affected by the amount of boron in GaInP/AlGaInP heterostructures. The boron concentration was found to increase when cracking temperature of the phosphorus source was increased. Boron incorporation was enhanced also when aluminum was present in the material.

KW - Defects

KW - Impurities

KW - Molecular beam epitaxy

KW - Phosphides

KW - Semiconducting III-V materials

UR - https://www.scopus.com/pages/publications/84951561374

U2 - 10.1016/j.jcrysgro.2015.02.048

DO - 10.1016/j.jcrysgro.2015.02.048

M3 - Article

AN - SCOPUS:84951561374

SN - 0022-0248

VL - 425

SP - 60

EP - 63

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells

Abstract

Keywords

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