Universal and reconfigurable logic gates in a compact three-terminal resonant tunneling diode

L. Worschech, F. Hartmann (Corresponding Author), T. Y. Kim, S. Höfling, M. Kamp, A. Forchel, Jouni Ahopelto, I. Neri, A. Dari, L. Gammaitoni

Research output: Contribution to journalArticleScientificpeer-review

26 Citations (Scopus)

Abstract

Submicron-sized mesas of resonant tunneling diodes (RTDs) with split drain contacts have been realized and the current-voltage characteristics have been studied in the bistable regime at room temperature. Dynamically biased, the RTDs show noise-triggered firing of spikelike signals and can act as reconfigurable universal logic gates for small voltage changes of a few millivolt at the input branches. These observations are interpreted in terms of a stochastic nonlinear processes. The logic gate operation shows gain for the fired-signal bursts with transconductance slopes exceeding the thermal limit. The RTD junction can be easily integrated to arrays of multiple inputs and have thus the potential to mimic neurons in nanoelectronic circuits.
Original languageEnglish
Article number042112
JournalApplied Physics Letters
Volume96
Issue number4
DOIs
Publication statusPublished - 2010
MoE publication typeA1 Journal article-refereed

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resonant tunneling diodes
logic
mesas
electric potential
transconductance
neurons
bursts
slopes
room temperature

Cite this

Worschech, L., Hartmann, F., Kim, T. Y., Höfling, S., Kamp, M., Forchel, A., ... Gammaitoni, L. (2010). Universal and reconfigurable logic gates in a compact three-terminal resonant tunneling diode. Applied Physics Letters, 96(4), [042112]. https://doi.org/10.1063/1.3302457
Worschech, L. ; Hartmann, F. ; Kim, T. Y. ; Höfling, S. ; Kamp, M. ; Forchel, A. ; Ahopelto, Jouni ; Neri, I. ; Dari, A. ; Gammaitoni, L. / Universal and reconfigurable logic gates in a compact three-terminal resonant tunneling diode. In: Applied Physics Letters. 2010 ; Vol. 96, No. 4.
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Worschech, L, Hartmann, F, Kim, TY, Höfling, S, Kamp, M, Forchel, A, Ahopelto, J, Neri, I, Dari, A & Gammaitoni, L 2010, 'Universal and reconfigurable logic gates in a compact three-terminal resonant tunneling diode', Applied Physics Letters, vol. 96, no. 4, 042112. https://doi.org/10.1063/1.3302457

Universal and reconfigurable logic gates in a compact three-terminal resonant tunneling diode. / Worschech, L.; Hartmann, F. (Corresponding Author); Kim, T. Y.; Höfling, S.; Kamp, M.; Forchel, A.; Ahopelto, Jouni; Neri, I.; Dari, A.; Gammaitoni, L.

In: Applied Physics Letters, Vol. 96, No. 4, 042112, 2010.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - Universal and reconfigurable logic gates in a compact three-terminal resonant tunneling diode

AU - Worschech, L.

AU - Hartmann, F.

AU - Kim, T. Y.

AU - Höfling, S.

AU - Kamp, M.

AU - Forchel, A.

AU - Ahopelto, Jouni

AU - Neri, I.

AU - Dari, A.

AU - Gammaitoni, L.

PY - 2010

Y1 - 2010

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AB - Submicron-sized mesas of resonant tunneling diodes (RTDs) with split drain contacts have been realized and the current-voltage characteristics have been studied in the bistable regime at room temperature. Dynamically biased, the RTDs show noise-triggered firing of spikelike signals and can act as reconfigurable universal logic gates for small voltage changes of a few millivolt at the input branches. These observations are interpreted in terms of a stochastic nonlinear processes. The logic gate operation shows gain for the fired-signal bursts with transconductance slopes exceeding the thermal limit. The RTD junction can be easily integrated to arrays of multiple inputs and have thus the potential to mimic neurons in nanoelectronic circuits.

U2 - 10.1063/1.3302457

DO - 10.1063/1.3302457

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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M1 - 042112

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