Use of a TiN barrier to improve GaAs FET ohmic contact reliability

Ronald Remba, Ilkka Suni, Marc Nicolet

Research output: Contribution to journalArticleScientificpeer-review

10 Citations (Scopus)

Abstract

We have used a reactively sputtered TiN diffusion barrier to prevent interpenetration of a (Ni)GeAuPt ohmic contact layer and Ti/Pt/Au overlay on GaAs devices baked at 250-300°C in air. Planar GaAs MESFET's and TLM patterns were fabricated and iteratively tested and baked. Devices without TiN showed severe degradation in morphology and dc and RF performance. Devices with TiN remained essentially unchanged.
Original languageEnglish
Pages (from-to)437 - 438
Number of pages2
JournalElectron device letters
Volume6
Issue number8
DOIs
Publication statusPublished - 1985
MoE publication typeNot Eligible

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