Use of a TiN barrier to improve GaAs FET ohmic contact reliability

Ronald Remba, Ilkka Suni, Marc Nicolet

Research output: Contribution to journalArticleScientificpeer-review

10 Citations (Scopus)

Abstract

We have used a reactively sputtered TiN diffusion barrier to prevent interpenetration of a (Ni)GeAuPt ohmic contact layer and Ti/Pt/Au overlay on GaAs devices baked at 250-300°C in air. Planar GaAs MESFET's and TLM patterns were fabricated and iteratively tested and baked. Devices without TiN showed severe degradation in morphology and dc and RF performance. Devices with TiN remained essentially unchanged.
Original languageEnglish
Pages (from-to)437 - 438
Number of pages2
JournalElectron device letters
Volume6
Issue number8
DOIs
Publication statusPublished - 1985
MoE publication typeNot Eligible

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Diffusion barriers
Ohmic contacts
Field effect transistors
Degradation
Air
gallium arsenide

Cite this

Remba, Ronald ; Suni, Ilkka ; Nicolet, Marc. / Use of a TiN barrier to improve GaAs FET ohmic contact reliability. In: Electron device letters. 1985 ; Vol. 6, No. 8. pp. 437 - 438.
@article{8fe2efd5435e46b1b604d8b3706c3382,
title = "Use of a TiN barrier to improve GaAs FET ohmic contact reliability",
abstract = "We have used a reactively sputtered TiN diffusion barrier to prevent interpenetration of a (Ni)GeAuPt ohmic contact layer and Ti/Pt/Au overlay on GaAs devices baked at 250-300°C in air. Planar GaAs MESFET's and TLM patterns were fabricated and iteratively tested and baked. Devices without TiN showed severe degradation in morphology and dc and RF performance. Devices with TiN remained essentially unchanged.",
author = "Ronald Remba and Ilkka Suni and Marc Nicolet",
year = "1985",
doi = "10.1109/EDL.1985.26182",
language = "English",
volume = "6",
pages = "437 -- 438",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronic Engineers IEEE",
number = "8",

}

Use of a TiN barrier to improve GaAs FET ohmic contact reliability. / Remba, Ronald; Suni, Ilkka; Nicolet, Marc.

In: Electron device letters, Vol. 6, No. 8, 1985, p. 437 - 438.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Use of a TiN barrier to improve GaAs FET ohmic contact reliability

AU - Remba, Ronald

AU - Suni, Ilkka

AU - Nicolet, Marc

PY - 1985

Y1 - 1985

N2 - We have used a reactively sputtered TiN diffusion barrier to prevent interpenetration of a (Ni)GeAuPt ohmic contact layer and Ti/Pt/Au overlay on GaAs devices baked at 250-300°C in air. Planar GaAs MESFET's and TLM patterns were fabricated and iteratively tested and baked. Devices without TiN showed severe degradation in morphology and dc and RF performance. Devices with TiN remained essentially unchanged.

AB - We have used a reactively sputtered TiN diffusion barrier to prevent interpenetration of a (Ni)GeAuPt ohmic contact layer and Ti/Pt/Au overlay on GaAs devices baked at 250-300°C in air. Planar GaAs MESFET's and TLM patterns were fabricated and iteratively tested and baked. Devices without TiN showed severe degradation in morphology and dc and RF performance. Devices with TiN remained essentially unchanged.

U2 - 10.1109/EDL.1985.26182

DO - 10.1109/EDL.1985.26182

M3 - Article

VL - 6

SP - 437

EP - 438

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 8

ER -