This paper discusses the use of ALD thin films as Bragg mirror structure materials in MEMS Fabry-Perot interferometers in the visible spectral range.
Utilizing polyimide sacrificial layer in the FPI fabrication process is also presented as an alternative method to allow higher temperature (T= 300 °C) ALD FPI processing.
ALD Al2O3 and TiO2 thin films grown at T= 110 °C are optically characterized to determine their performance in the UV - visible range (λ>200nm) and effects of the ALD temperature on the thin film stacks and the FPI process is discussed.
Optically simulated 5-layer Bragg mirror stacks consisting of ALD Al2O3 and TiO2 for wavelengths between 420 nm and 1000 nm are presented and corresponding MEMS mirror membrane structures are fabricated at T= 110 °C and tested for their release yield properties.
As a result, the applicable wavelength range of the low-temperature ALD FPI technology can be defined.
|Series||Proceedings of SPIE|
|Conference||Advanced Fabrication Technologies for Micro/Nano Optics and Photonics V|
|Period||24/01/12 → 25/01/12|