Utilizing roll-to-roll techniques for manufacturing source-drain electrodes for all-polymer transistors

Tapio Mäkelä (Corresponding Author), Salme Jussila, Harri Kosonen, Tomas G Bäcklund, Henrik G O Sandberg, Henrik Stubb

Research output: Contribution to journalArticleScientificpeer-review

88 Citations (Scopus)

Abstract

The first all-polymer field effect transistor was reported already ten years ago. In the last few years rapid progress has been made in the field of plastic electronics. This progress has been based on developments in materials and in fabrication technology. In this work we report an all-polymer transistor in which source and drain electrodes are printed by using flexographic printing. This method is widely used in the printing industry. In the all-polymer transistor device, polyaniline (PANI), regio-regular poly(3-hexylthiophene) (rr-PHT), poly(vinylphenol) (PVP) and poly(3,4)ethylenedioxythiophene/potystyrenesulfonate (PEDOT/PSS) are used as source and drain electrodes, active channel semiconductor material, insulator and gate electrode, respectively. Flexible polyethylene terephthalate (PET) and poly(ethylene-2,6-naphthalate) (PEN) sheets are used as substrates. First, source and drain electrodes are printed by using a laboratory scale FLEXO printing machine, rr-PHT and PVP are spin coated and finally PEDOT/PSS is drop cast. As a result, conductivity, spreading, optical quality and thickness of the produced source-drain electrode pairs are measured and the transistor devices are characterized. Manufacturing of organic transistors entirely by a roll-to-roll process is evaluated.
Original languageEnglish
Pages (from-to)285-288
Number of pages4
JournalSynthetic Metals
Volume153
Issue number1-3
DOIs
Publication statusPublished - 1 Sep 2005
MoE publication typeA1 Journal article-refereed

Fingerprint

Polymers
Transistors
transistors
manufacturing
Electrodes
electrodes
printing
polymers
Printing
Optical conductivity
Polyethylene Terephthalates
polyethylene terephthalate
Polyaniline
Field effect transistors
Polyethylene terephthalates
casts
Ethylene
ethylene
Electronic equipment
plastics

Keywords

  • solution processing
  • polymer interfaces
  • polyaniline and derivatives
  • polythiophene and derivatives
  • reel-to-reel production

Cite this

Mäkelä, Tapio ; Jussila, Salme ; Kosonen, Harri ; Bäcklund, Tomas G ; Sandberg, Henrik G O ; Stubb, Henrik. / Utilizing roll-to-roll techniques for manufacturing source-drain electrodes for all-polymer transistors. In: Synthetic Metals. 2005 ; Vol. 153, No. 1-3. pp. 285-288.
@article{e7a22d28d1af412c9c304d45b75257de,
title = "Utilizing roll-to-roll techniques for manufacturing source-drain electrodes for all-polymer transistors",
abstract = "The first all-polymer field effect transistor was reported already ten years ago. In the last few years rapid progress has been made in the field of plastic electronics. This progress has been based on developments in materials and in fabrication technology. In this work we report an all-polymer transistor in which source and drain electrodes are printed by using flexographic printing. This method is widely used in the printing industry. In the all-polymer transistor device, polyaniline (PANI), regio-regular poly(3-hexylthiophene) (rr-PHT), poly(vinylphenol) (PVP) and poly(3,4)ethylenedioxythiophene/potystyrenesulfonate (PEDOT/PSS) are used as source and drain electrodes, active channel semiconductor material, insulator and gate electrode, respectively. Flexible polyethylene terephthalate (PET) and poly(ethylene-2,6-naphthalate) (PEN) sheets are used as substrates. First, source and drain electrodes are printed by using a laboratory scale FLEXO printing machine, rr-PHT and PVP are spin coated and finally PEDOT/PSS is drop cast. As a result, conductivity, spreading, optical quality and thickness of the produced source-drain electrode pairs are measured and the transistor devices are characterized. Manufacturing of organic transistors entirely by a roll-to-roll process is evaluated.",
keywords = "solution processing, polymer interfaces, polyaniline and derivatives, polythiophene and derivatives, reel-to-reel production",
author = "Tapio M{\"a}kel{\"a} and Salme Jussila and Harri Kosonen and B{\"a}cklund, {Tomas G} and Sandberg, {Henrik G O} and Henrik Stubb",
year = "2005",
month = "9",
day = "1",
doi = "10.1016/j.synthmet.2005.07.140",
language = "English",
volume = "153",
pages = "285--288",
journal = "Synthetic Metals",
issn = "0379-6779",
publisher = "Elsevier",
number = "1-3",

}

Utilizing roll-to-roll techniques for manufacturing source-drain electrodes for all-polymer transistors. / Mäkelä, Tapio (Corresponding Author); Jussila, Salme; Kosonen, Harri; Bäcklund, Tomas G; Sandberg, Henrik G O; Stubb, Henrik.

In: Synthetic Metals, Vol. 153, No. 1-3, 01.09.2005, p. 285-288.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Utilizing roll-to-roll techniques for manufacturing source-drain electrodes for all-polymer transistors

AU - Mäkelä, Tapio

AU - Jussila, Salme

AU - Kosonen, Harri

AU - Bäcklund, Tomas G

AU - Sandberg, Henrik G O

AU - Stubb, Henrik

PY - 2005/9/1

Y1 - 2005/9/1

N2 - The first all-polymer field effect transistor was reported already ten years ago. In the last few years rapid progress has been made in the field of plastic electronics. This progress has been based on developments in materials and in fabrication technology. In this work we report an all-polymer transistor in which source and drain electrodes are printed by using flexographic printing. This method is widely used in the printing industry. In the all-polymer transistor device, polyaniline (PANI), regio-regular poly(3-hexylthiophene) (rr-PHT), poly(vinylphenol) (PVP) and poly(3,4)ethylenedioxythiophene/potystyrenesulfonate (PEDOT/PSS) are used as source and drain electrodes, active channel semiconductor material, insulator and gate electrode, respectively. Flexible polyethylene terephthalate (PET) and poly(ethylene-2,6-naphthalate) (PEN) sheets are used as substrates. First, source and drain electrodes are printed by using a laboratory scale FLEXO printing machine, rr-PHT and PVP are spin coated and finally PEDOT/PSS is drop cast. As a result, conductivity, spreading, optical quality and thickness of the produced source-drain electrode pairs are measured and the transistor devices are characterized. Manufacturing of organic transistors entirely by a roll-to-roll process is evaluated.

AB - The first all-polymer field effect transistor was reported already ten years ago. In the last few years rapid progress has been made in the field of plastic electronics. This progress has been based on developments in materials and in fabrication technology. In this work we report an all-polymer transistor in which source and drain electrodes are printed by using flexographic printing. This method is widely used in the printing industry. In the all-polymer transistor device, polyaniline (PANI), regio-regular poly(3-hexylthiophene) (rr-PHT), poly(vinylphenol) (PVP) and poly(3,4)ethylenedioxythiophene/potystyrenesulfonate (PEDOT/PSS) are used as source and drain electrodes, active channel semiconductor material, insulator and gate electrode, respectively. Flexible polyethylene terephthalate (PET) and poly(ethylene-2,6-naphthalate) (PEN) sheets are used as substrates. First, source and drain electrodes are printed by using a laboratory scale FLEXO printing machine, rr-PHT and PVP are spin coated and finally PEDOT/PSS is drop cast. As a result, conductivity, spreading, optical quality and thickness of the produced source-drain electrode pairs are measured and the transistor devices are characterized. Manufacturing of organic transistors entirely by a roll-to-roll process is evaluated.

KW - solution processing

KW - polymer interfaces

KW - polyaniline and derivatives

KW - polythiophene and derivatives

KW - reel-to-reel production

U2 - 10.1016/j.synthmet.2005.07.140

DO - 10.1016/j.synthmet.2005.07.140

M3 - Article

VL - 153

SP - 285

EP - 288

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 1-3

ER -