In this work, we have imprinted features down to 50 nm by UV-SSIL using a transparent polymer stamp with a patterned mesa. The structure of the polymer stamp consists of a patterned polymer layer on a small quartz mesa on top of a quartz support. The patterning of the transparent stamp was done using a silicon master, which fabricated using electron beam lithography and dry etching. The submicron features of the silicon stamp was transferred into polymer stamp by SSIL using NPS300 Nanoimprinting Stepper. The advantage of using a small mesa, is ability to confine pressure into small area to decrease residual thickness. Also, a mesa with small surface area enables better adaptation to the surface topography of the substrate.
|Title of host publication||Proceedings of the XLIII Annual Conference of the Finnish Physical Society. Espoo, Finland, 12-14 March 2009|
|Place of Publication||Espoo|
|Publisher||Helsinki University of Technology|
|Publication status||Published - 2009|
|MoE publication type||B3 Non-refereed article in conference proceedings|
|Event||XLIII Annual Conference of the Finnish Physical Society - Espoo, Finland|
Duration: 12 Mar 2009 → 14 Mar 2009
|Conference||XLIII Annual Conference of the Finnish Physical Society|
|Period||12/03/09 → 14/03/09|
Haatainen, T., Mäkelä, T., Ahopelto, J., Kawaguchi, Y., & Lecarpentier, G. (2009). UV step and stamp imprint lithography using transparent polymer stamp. In P. Laiho (Ed.), Proceedings of the XLIII Annual Conference of the Finnish Physical Society. Espoo, Finland, 12-14 March 2009  Helsinki University of Technology.