Vacancy defects in epitaxial InN: Identification and electrical properties

A. Laakso; J. Oila; A. Kemppinen; K. Saarinen; W. Egger; L. Liszkay; P. Sperr; H. Lu; W. J. Schaff

doi:10.1016/j.jcrysgro.2004.05.032

Vacancy defects in epitaxial InN: Identification and electrical properties

A. Laakso, J. Oila, A. Kemppinen, K. Saarinen^*, W. Egger, L. Liszkay, P. Sperr, H. Lu, W. J. Schaff

^*Corresponding author for this work

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Abstract

We have used a low-energy positron beam to identify and quantify the dominant vacancy defects in InN layers grown on Al₂O₃ by molecular beam epitaxy. By applying both continuous and pulsed positron beams, we can show that In vacancies are formed during the crystal growth. Their concentration decreases from ∼5×10¹⁸ to below 10 ¹⁶cm^-3 with increasing layer thickness (120-800nm). The In vacancy concentration correlates with the free electron concentration and decreases with increasing electron Hall mobility. These results suggest that In vacancies act as both compensating defects and electron scattering centers in InN films.

Original language	English
Pages (from-to)	41-49
Number of pages	9
Journal	Journal of Crystal Growth
Volume	269
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.05.032
Publication status	Published - 15 Aug 2004
MoE publication type	A4 Article in a conference publication
Event	Proceedings of the First ONR International Indium Nitride Work - Fremantle, Australia Duration: 16 Nov 2003 → 20 Nov 2003

Keywords

A1. Point defects
A1. Positron annihilation spectroscopy
A3. Molecular beam epitaxy
B1 InN

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10.1016/j.jcrysgro.2004.05.032

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title = "Vacancy defects in epitaxial InN: Identification and electrical properties",

abstract = "We have used a low-energy positron beam to identify and quantify the dominant vacancy defects in InN layers grown on Al2O3 by molecular beam epitaxy. By applying both continuous and pulsed positron beams, we can show that In vacancies are formed during the crystal growth. Their concentration decreases from ∼5×1018 to below 10 16cm-3 with increasing layer thickness (120-800nm). The In vacancy concentration correlates with the free electron concentration and decreases with increasing electron Hall mobility. These results suggest that In vacancies act as both compensating defects and electron scattering centers in InN films.",

keywords = "A1. Point defects, A1. Positron annihilation spectroscopy, A3. Molecular beam epitaxy, B1 InN",

author = "A. Laakso and J. Oila and A. Kemppinen and K. Saarinen and W. Egger and L. Liszkay and P. Sperr and H. Lu and Schaff, {W. J.}",

note = "Funding Information: The work has been partly financed by the Academy of Finland (DENOS project). The authors also acknowledge the support of Colin Wood at the Office of Naval Research.; Proceedings of the First ONR International Indium Nitride Work ; Conference date: 16-11-2003 Through 20-11-2003",

year = "2004",

month = aug,

day = "15",

doi = "10.1016/j.jcrysgro.2004.05.032",

language = "English",

volume = "269",

pages = "41--49",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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number = "1",

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TY - JOUR

T1 - Vacancy defects in epitaxial InN

T2 - Proceedings of the First ONR International Indium Nitride Work

AU - Laakso, A.

AU - Oila, J.

AU - Kemppinen, A.

AU - Saarinen, K.

AU - Egger, W.

AU - Liszkay, L.

AU - Sperr, P.

AU - Lu, H.

AU - Schaff, W. J.

N1 - Funding Information: The work has been partly financed by the Academy of Finland (DENOS project). The authors also acknowledge the support of Colin Wood at the Office of Naval Research.

PY - 2004/8/15

Y1 - 2004/8/15

N2 - We have used a low-energy positron beam to identify and quantify the dominant vacancy defects in InN layers grown on Al2O3 by molecular beam epitaxy. By applying both continuous and pulsed positron beams, we can show that In vacancies are formed during the crystal growth. Their concentration decreases from ∼5×1018 to below 10 16cm-3 with increasing layer thickness (120-800nm). The In vacancy concentration correlates with the free electron concentration and decreases with increasing electron Hall mobility. These results suggest that In vacancies act as both compensating defects and electron scattering centers in InN films.

AB - We have used a low-energy positron beam to identify and quantify the dominant vacancy defects in InN layers grown on Al2O3 by molecular beam epitaxy. By applying both continuous and pulsed positron beams, we can show that In vacancies are formed during the crystal growth. Their concentration decreases from ∼5×1018 to below 10 16cm-3 with increasing layer thickness (120-800nm). The In vacancy concentration correlates with the free electron concentration and decreases with increasing electron Hall mobility. These results suggest that In vacancies act as both compensating defects and electron scattering centers in InN films.

KW - A1. Point defects

KW - A1. Positron annihilation spectroscopy

KW - A3. Molecular beam epitaxy

KW - B1 InN

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U2 - 10.1016/j.jcrysgro.2004.05.032

DO - 10.1016/j.jcrysgro.2004.05.032

M3 - Article in a proceedings journal

AN - SCOPUS:3343021155

SN - 0022-0248

VL - 269

SP - 41

EP - 49

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

Y2 - 16 November 2003 through 20 November 2003

ER -

Vacancy defects in epitaxial InN: Identification and electrical properties

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Keywords

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