Vacancy defects in epitaxial InN: Identification and electrical properties

A. Laakso, J. Oila, A. Kemppinen, K. Saarinen, W. Egger, L. Liszkay, P. Sperr, H. Lu, W. J. Schaff

Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

17 Citations (Scopus)


We have used a low-energy positron beam to identify and quantify the dominant vacancy defects in InN layers grown on Al2O3 by molecular beam epitaxy. By applying both continuous and pulsed positron beams, we can show that In vacancies are formed during the crystal growth. Their concentration decreases from ∼5×1018 to below 10 16cm-3 with increasing layer thickness (120-800nm). The In vacancy concentration correlates with the free electron concentration and decreases with increasing electron Hall mobility. These results suggest that In vacancies act as both compensating defects and electron scattering centers in InN films.

Original languageEnglish
Pages (from-to)41-49
Number of pages9
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 15 Aug 2004
MoE publication typeA4 Article in a conference publication
EventProceedings of the First ONR International Indium Nitride Work - Fremantle, Australia
Duration: 16 Nov 200320 Nov 2003


  • A1. Point defects
  • A1. Positron annihilation spectroscopy
  • A3. Molecular beam epitaxy
  • B1 InN


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