Vacancy defects in epitaxial InN: Identification and electrical properties

Keyphrases

• Electrical Properties 100%
• Epitaxial 100%
• Vacancy Defects 100%
• Aluminum Oxide 50%
• Layer Thickness 50%
• Crystal Growth 50%
• Scattering Center 50%
• Molecular Beam Epitaxy 50%
• Low Energy 50%
• Vacancy Concentration 50%
• Defect Scattering 50%
• Positron Beam 50%
• Hall Mobility 50%
• Electron Scattering 50%
• Pulsed Positron Beam 50%
• Free Electron Concentration 50%
• InN Films 50%

INIS

• electrical properties 100%
• defects 100%
• vacancies 100%
• epitaxy 100%
• inns 100%
• concentration 60%
• electrons 60%
• layers 40%
• increasing 40%
• positron beams 40%
• thickness 20%
• energy 20%
• films 20%
• crystal growth 20%
• mobility 20%
• scattering 20%
• molecular beam epitaxy 20%

Material Science

• Vacancy Defect 100%
• Hall Mobility 50%
• Molecular Beam Epitaxy 50%
• Film 50%
• Aluminum Oxide 50%
• Crystal Growth 50%