Vacuum packaging at wafer level for MEMS using gold-tin metallurgy

Keyphrases

• Vacuum Packaging 100%
• Metallurgy 100%
• Vacuum Sealing 100%
• Wafer Level 100%
• Silicon Interposer 100%
• Low Temperature 50%
• Micro-electro-mechanical Systems 50%
• Microscopic Analysis 50%
• Wafer-scale 50%
• Internal Pressure 50%
• Through Silicon via 50%
• Wafer-level Packaging 50%
• AuSn 50%
• X-ray Imaging 50%
• Process Compatibility 50%
• Electrical Contact 50%
• Shear Test 50%
• Chip-scale 50%
• Thin-film Silicon 50%
• Hermeticity 50%
• Imaging Microscopy 50%
• Systems-based 50%
• 200 Mm Wafers 50%

INIS

• levels 100%
• silicon 100%
• packaging 100%
• gold 100%
• tin 100%
• metallurgy 100%
• evaluation 66%
• thickness 33%
• low temperature 33%
• shear 33%
• range 33%
• yields 33%
• feeding 33%
• testing 33%
• electric contacts 33%
• cross sections 33%
• microscopy 33%
• compatibility 33%
• carriers 33%
• rings 33%
• melting 33%

Engineering

• Microelectromechanical System 100%
• Tin Metallurgy 100%
• Interposer 40%
• Low-Temperature 20%
• Level Packaging 20%
• Electrical Contact 20%
• Micro-Electro-Mechanical System 20%
• Cross Section 20%
• Internal Pressure 20%
• Melting Point 20%