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Valense band structure of Ge
x
Si
1-x
for hole transport calculation
Ying Fu
, Kaj Grahn
, Magnus Willander
VTT Technical Research Centre of Finland
University of Linköping
VTT (former employee or external)
Research output
:
Contribution to journal
›
Article
›
Scientific
›
peer-review
24
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Citations (Scopus)
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Dive into the research topics of 'Valense band structure of Ge
x
Si
1-x
for hole transport calculation'. Together they form a unique fingerprint.
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Keyphrases
P-type
100%
Banded Structure
100%
Transport Calculation
100%
Hole Transport
100%
Heavy Hole
100%
Density of States
66%
Doping Concentration
66%
Non-parabolic
66%
Non-spherical
66%
Diffusion Coefficient
33%
Transport Properties
33%
High Doping
33%
Si Substrate
33%
Band Edge
33%
Fermi Level
33%
Si-doped
33%
Data Library
33%
Energy Range
33%
Valence Band Structure
33%
Impurity Doping
33%
Valence Band
33%
Hole Density
33%
Hole Transport Properties
33%
Light Hole
33%
Cm(III)
33%
Splitting off
33%
Chemistry
Electronic Band Structure
100%
Hole Transport
100%
Doping
100%
Density of State
66%
Transport Property
66%
Fermi Level
33%
Valance Band
33%
Valence Band
33%
Diffusion Coefficient
33%
INIS
transport
100%
holes
100%
concentration
42%
density of states
28%
valence
28%
data
14%
applications
14%
doped materials
14%
substrates
14%
diffusion
14%
impurities
14%
velocity
14%
mobility
14%
curves
14%
spin
14%
nuclear data collections
14%
energy dependence
14%
fermi level
14%
energy range
14%
Engineering
Band Structure
100%
Valence Band
100%
Si Substrate
50%
Band Edge
50%
Diffusion Coefficient
50%
Fermi Level
50%
Physics
Density of States
100%
Transport Property
100%
Diffusion Coefficient
50%
Material Science
Density
100%
Diffusivity
50%