The achievable fidelity of many nanoelectronic devices based on superconducting aluminum is limited by either the density of residual nonequilibrium quasiparticles nqp or the density of quasiparticle states in the gap, characterized by Dynes parameter γ. We infer upper bounds nqp<0.033 μm−3 and γ<1.6×10−7from transport measurements performed on Al/Cu/Al single-electron transistors, improving previous results by an order of magnitude. Owing to efficient microwave shielding and quasiparticle relaxation, a typical number of quasiparticles in the superconducting leads is zero.
|Journal||Physical Review B: Condensed Matter and Materials Physics|
|Publication status||Published - 2012|
|MoE publication type||A1 Journal article-refereed|
Saira, O-P., Kemppinen, A., Maisi, V. F., & Pekola, J. P. (2012). Vanishing quasiparticle density in a hybrid Al/Cu/Al single-electron transistor. Physical Review B: Condensed Matter and Materials Physics, 85(1), . https://doi.org/10.1103/PhysRevB.85.012504