Vanishing quasiparticle density in a hybrid Al/Cu/Al single-electron transistor

O.-P. Saira, A. Kemppinen, V.F. Maisi, J.P. Pekola

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

The achievable fidelity of many nanoelectronic devices based on superconducting aluminum is limited by either the density of residual nonequilibrium quasiparticles nqp or the density of quasiparticle states in the gap, characterized by Dynes parameter γ. We infer upper bounds nqp<0.033 μm−3 and γ<1.6×10−7from transport measurements performed on Al/Cu/Al single-electron transistors, improving previous results by an order of magnitude. Owing to efficient microwave shielding and quasiparticle relaxation, a typical number of quasiparticles in the superconducting leads is zero.
Original languageEnglish
Article number012504
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume85
Issue number1
DOIs
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed

Fingerprint

Single electron transistors
single electron transistors
Nanoelectronics
Aluminum
Shielding
Microwaves
shielding
aluminum
microwaves

Keywords

  • nanoelectronics
  • superconductivity
  • quasiparticles

Cite this

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abstract = "The achievable fidelity of many nanoelectronic devices based on superconducting aluminum is limited by either the density of residual nonequilibrium quasiparticles nqp or the density of quasiparticle states in the gap, characterized by Dynes parameter γ. We infer upper bounds nqp<0.033 μm−3 and γ<1.6×10−7from transport measurements performed on Al/Cu/Al single-electron transistors, improving previous results by an order of magnitude. Owing to efficient microwave shielding and quasiparticle relaxation, a typical number of quasiparticles in the superconducting leads is zero.",
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author = "O.-P. Saira and A. Kemppinen and V.F. Maisi and J.P. Pekola",
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language = "English",
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Vanishing quasiparticle density in a hybrid Al/Cu/Al single-electron transistor. / Saira, O.-P.; Kemppinen, A.; Maisi, V.F.; Pekola, J.P.

In: Physical Review B: Condensed Matter and Materials Physics, Vol. 85, No. 1, 012504, 2012.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Vanishing quasiparticle density in a hybrid Al/Cu/Al single-electron transistor

AU - Saira, O.-P.

AU - Kemppinen, A.

AU - Maisi, V.F.

AU - Pekola, J.P.

PY - 2012

Y1 - 2012

N2 - The achievable fidelity of many nanoelectronic devices based on superconducting aluminum is limited by either the density of residual nonequilibrium quasiparticles nqp or the density of quasiparticle states in the gap, characterized by Dynes parameter γ. We infer upper bounds nqp<0.033 μm−3 and γ<1.6×10−7from transport measurements performed on Al/Cu/Al single-electron transistors, improving previous results by an order of magnitude. Owing to efficient microwave shielding and quasiparticle relaxation, a typical number of quasiparticles in the superconducting leads is zero.

AB - The achievable fidelity of many nanoelectronic devices based on superconducting aluminum is limited by either the density of residual nonequilibrium quasiparticles nqp or the density of quasiparticle states in the gap, characterized by Dynes parameter γ. We infer upper bounds nqp<0.033 μm−3 and γ<1.6×10−7from transport measurements performed on Al/Cu/Al single-electron transistors, improving previous results by an order of magnitude. Owing to efficient microwave shielding and quasiparticle relaxation, a typical number of quasiparticles in the superconducting leads is zero.

KW - nanoelectronics

KW - superconductivity

KW - quasiparticles

U2 - 10.1103/PhysRevB.85.012504

DO - 10.1103/PhysRevB.85.012504

M3 - Article

VL - 85

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 1

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