On-wafer noise figure and insertion gain measurement set-ups have been developed over 50-110 GHz frequency range. Wafer scale noise figure and insertion gain measurements can be done in an automatic manner using PC controlled automated probe station and in-house written software. In narrow band measurements, large systematic errors may remain undiscovered. These errors are usually caused by reflections in the set-up, which are difficult to calibrate out. Wideband measurements are often the only method, which can efficiently reveal these errors. This aspect is increasingly important as frequency increases.
|Title of host publication||GAAS 2002 The European Gallium Arsenide & Related III-V Compounds Applications Symposium|
|Subtitle of host publication||Milan, Italy, 23-24 September 2002|
|Publication status||Published - 2003|
|MoE publication type||A4 Article in a conference publication|
- noise figure
- on-wafer measurements
Vähä-Heikkilä, T., Lahdes, M., Kantanen, M., Karttaavi, T., & Tuovinen, J. (2003). Very wideband automated on-wafer noise figure and gain measurements at 50-110 GHz. In GAAS 2002 The European Gallium Arsenide & Related III-V Compounds Applications Symposium : Milan, Italy, 23-24 September 2002 (pp. 233-236)