Very wideband automated on-wafer noise figure and gain measurements at 50-110 GHz

Tauno Vähä-Heikkilä, Manu Lahdes, Mikko Kantanen, Timo Karttaavi, Jussi Tuovinen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

On-wafer noise figure and insertion gain measurement set-ups have been developed over 50-110 GHz frequency range. Wafer scale noise figure and insertion gain measurements can be done in an automatic manner using PC controlled automated probe station and in-house written software. In narrow band measurements, large systematic errors may remain undiscovered. These errors are usually caused by reflections in the set-up, which are difficult to calibrate out. Wideband measurements are often the only method, which can efficiently reveal these errors. This aspect is increasingly important as frequency increases.
Original languageEnglish
Title of host publicationGAAS 2002 The European Gallium Arsenide & Related III-V Compounds Applications Symposium
Subtitle of host publicationMilan, Italy, 23-24 September 2002
Pages233-236
Publication statusPublished - 2003
MoE publication typeA4 Article in a conference publication

Keywords

  • noise figure
  • on-wafer measurements
  • LNA
  • HEMT

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    Vähä-Heikkilä, T., Lahdes, M., Kantanen, M., Karttaavi, T., & Tuovinen, J. (2003). Very wideband automated on-wafer noise figure and gain measurements at 50-110 GHz. In GAAS 2002 The European Gallium Arsenide & Related III-V Compounds Applications Symposium : Milan, Italy, 23-24 September 2002 (pp. 233-236)