Very wideband automated on-wafer noise figure and gain measurements at 50-110 GHz

Tauno Vähä-Heikkilä, Manu Lahdes, Mikko Kantanen, Timo Karttaavi, Jussi Tuovinen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review


    On-wafer noise figure and insertion gain measurement set-ups have been developed over 50-110 GHz frequency range. Wafer scale noise figure and insertion gain measurements can be done in an automatic manner using PC controlled automated probe station and in-house written software. In narrow band measurements, large systematic errors may remain undiscovered. These errors are usually caused by reflections in the set-up, which are difficult to calibrate out. Wideband measurements are often the only method, which can efficiently reveal these errors. This aspect is increasingly important as frequency increases.
    Original languageEnglish
    Title of host publicationGAAS 2002 The European Gallium Arsenide & Related III-V Compounds Applications Symposium
    Subtitle of host publicationMilan, Italy, 23-24 September 2002
    PublisherEuropean Microwave Association (EuMA)
    ISBN (Print)978-0-86213-213-2, 0-86213-213-4
    Publication statusPublished - 2003
    MoE publication typeA4 Article in a conference publication


    • noise figure
    • on-wafer measurements
    • LNA
    • HEMT


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