Very wideband automated on-wafer noise figure and gain measurements at 50-110 GHz

Tauno Vähä-Heikkilä; Manu Lahdes; Mikko Kantanen; Timo Karttaavi; Jussi Tuovinen

Very wideband automated on-wafer noise figure and gain measurements at 50-110 GHz

Tauno Vähä-Heikkilä, Manu Lahdes, Mikko Kantanen, Timo Karttaavi, Jussi Tuovinen

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

On-wafer noise figure and insertion gain measurement set-ups have been developed over 50-110 GHz frequency range. Wafer scale noise figure and insertion gain measurements can be done in an automatic manner using PC controlled automated probe station and in-house written software. In narrow band measurements, large systematic errors may remain undiscovered. These errors are usually caused by reflections in the set-up, which are difficult to calibrate out. Wideband measurements are often the only method, which can efficiently reveal these errors. This aspect is increasingly important as frequency increases.

Original language	English
Title of host publication	GAAS 2002 The European Gallium Arsenide & Related III-V Compounds Applications Symposium
Subtitle of host publication	Milan, Italy, 23-24 September 2002
Publisher	European Microwave Association (EuMA)
Pages	233-236
ISBN (Print)	978-0-86213-213-2, 0-86213-213-4
Publication status	Published - 2003
MoE publication type	A4 Article in a conference publication

Keywords

noise figure
on-wafer measurements
LNA
HEMT

Cite this

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title = "Very wideband automated on-wafer noise figure and gain measurements at 50-110 GHz",

abstract = "On-wafer noise figure and insertion gain measurement set-ups have been developed over 50-110 GHz frequency range. Wafer scale noise figure and insertion gain measurements can be done in an automatic manner using PC controlled automated probe station and in-house written software. In narrow band measurements, large systematic errors may remain undiscovered. These errors are usually caused by reflections in the set-up, which are difficult to calibrate out. Wideband measurements are often the only method, which can efficiently reveal these errors. This aspect is increasingly important as frequency increases.",

keywords = "noise figure, on-wafer measurements, LNA, HEMT",

author = "Tauno V{\"a}h{\"a}-Heikkil{\"a} and Manu Lahdes and Mikko Kantanen and Timo Karttaavi and Jussi Tuovinen",

year = "2003",

language = "English",

isbn = "978-0-86213-213-2",

pages = "233--236",

booktitle = "GAAS 2002 The European Gallium Arsenide \& Related III-V Compounds Applications Symposium",

publisher = "European Microwave Association (EuMA)",

address = "Belgium",

}

Very wideband automated on-wafer noise figure and gain measurements at 50-110 GHz. / Vähä-Heikkilä, Tauno ; Lahdes, Manu ; Kantanen, Mikko et al.
GAAS 2002 The European Gallium Arsenide & Related III-V Compounds Applications Symposium : Milan, Italy, 23-24 September 2002. European Microwave Association (EuMA), 2003. p. 233-236.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Very wideband automated on-wafer noise figure and gain measurements at 50-110 GHz

AU - Vähä-Heikkilä, Tauno

AU - Lahdes, Manu

AU - Kantanen, Mikko

AU - Karttaavi, Timo

AU - Tuovinen, Jussi

PY - 2003

Y1 - 2003

N2 - On-wafer noise figure and insertion gain measurement set-ups have been developed over 50-110 GHz frequency range. Wafer scale noise figure and insertion gain measurements can be done in an automatic manner using PC controlled automated probe station and in-house written software. In narrow band measurements, large systematic errors may remain undiscovered. These errors are usually caused by reflections in the set-up, which are difficult to calibrate out. Wideband measurements are often the only method, which can efficiently reveal these errors. This aspect is increasingly important as frequency increases.

AB - On-wafer noise figure and insertion gain measurement set-ups have been developed over 50-110 GHz frequency range. Wafer scale noise figure and insertion gain measurements can be done in an automatic manner using PC controlled automated probe station and in-house written software. In narrow band measurements, large systematic errors may remain undiscovered. These errors are usually caused by reflections in the set-up, which are difficult to calibrate out. Wideband measurements are often the only method, which can efficiently reveal these errors. This aspect is increasingly important as frequency increases.

KW - noise figure

KW - on-wafer measurements

KW - LNA

KW - HEMT

M3 - Conference article in proceedings

SN - 978-0-86213-213-2

SN - 0-86213-213-4

SP - 233

EP - 236

BT - GAAS 2002 The European Gallium Arsenide & Related III-V Compounds Applications Symposium

PB - European Microwave Association (EuMA)

ER -

Very wideband automated on-wafer noise figure and gain measurements at 50-110 GHz

Abstract

Keywords

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