Abstract
This paper presents a new design of the silicon-based photodiode
detector for medical imaging, especially for the X-ray computed
tomography applications. The new structure of the photodiode includes a
conventional front-illuminated photodiode and a through wafer
interconnection. Moreover, the through wafer interconnection is
integrated into the photodiode by being placed inside the active area of
the photodiode. This new structure is called via-in-pixel design. Truly
2D photodiode detector can be designed with maximum free space or
minimum gap between each two photodiode elements by using the
via-in-pixel design. In addition, 2D photodiode detector arrays can be
constructed by tiling more edgeless detectors. In the paper, the
via-in-pixel photodiodes were demonstrated and the performances were
measured. Together with the measurement data, a quasi-3D device
simulation was performed to disclose the electrical characteristics of
the via-in-pixel photodiode by using Synopsis Advanced TCAD software.
The results show that the via-in-pixel design of the photodiode detector
can either meet or exceed the medical imaging requirements.
Original language | English |
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Pages (from-to) | 59-65 |
Journal | Sensors and Actuators A: Physical |
Volume | 145-146 |
DOIs | |
Publication status | Published - 2008 |
MoE publication type | A1 Journal article-refereed |
Keywords
- Via-in-pixel design
- Computed tomography
- Photodiode detector
- Through wafer interconnection