Abstract
This paper presents an advanced design of the photodiode detector for medical imaging, especially for the X-ray computed tomography applications. In this paper, through wafer interconnection technology with via-in-pixel design is utilized to achieve the truly 2D extendable feature of the photodiode detector. The active area of each photodiode element on the detector can achieve the maximum active area with the fixed pitch size. Comparing to the via-off-pixel design, different parameters of the photodiode with via-in-pixel design were measured and analyzed from the demonstrated samples. The results show that the performances of the samples either meet or exceed the requirements of the modern X-ray computed tomography applications.
Original language | English |
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Title of host publication | TRANSDUCERS 2007 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
Pages | 2131-2134 |
ISBN (Electronic) | 1-4244-0842-3 |
ISBN (Print) | 1-4244-0841-5 |
DOIs | |
Publication status | Published - 2007 |
MoE publication type | A4 Article in a conference publication |
Event | TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems - Lyon, France Duration: 10 Jun 2007 → 14 Jun 2007 |
Conference
Conference | TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems |
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Country/Territory | France |
City | Lyon |
Period | 10/06/07 → 14/06/07 |
Keywords
- Computed tomography
- Photodiode detector
- Through wafer interconnection