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Void shape control in GaN re-grown on hexagonally patterned mask-less GaN

  • Muhammad Ali
  • , A.E. Romanov
  • , Sami Suihkonen
  • , Olli Svensk
  • , Pekka T. Törmä
  • , Markku Sopanen
  • , Harri Lipsanen
  • , M.A. Odnoblyudov
  • , V.E. Bougrov
  • Aalto University
  • Optogan GmbH

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
Pages (from-to)188-191
Number of pages4
JournalJournal of Crystal Growth
Volume315
Issue number1
DOIs
Publication statusPublished - 15 Jan 2011
MoE publication typeA1 Journal article-refereed

Keywords

  • Metalorganic vapor phase Epitaxy, Pendeo Epitaxy, Voids, Gallium nitride, patterning, Nitrides

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