W-band on-wafer noise parameter measurements

Tauno Vähä-Heikkilä, Manu Lahdes, Jussi Varis, Mikko Kantanen, Jussi Tuovinen, Timo Karttaavi, Hannu Hakojärvi

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

1 Citation (Scopus)

Abstract

Several current and planned space missions for earth observation and astronomy require very low noise receivers at W-band. Key components in W-band low noise receivers are the InP low noise amplifiers (LNA). The design of LNAs is a greatly dependent at the availability of good noise models for the devices used in the LNAs. To characterise devices at W-band an on-wafer noise parameter set-up has been developed and is presented here. Using the set-up the noise parameters of an InP HEMT in the frequency band 79-94 GHz have been measured. These are the first reported noise parameter measurements of active devices at W-band. The measurement set-up is based on the cold-source method.
Original languageEnglish
Title of host publication31st European Microwave Conference
PublisherCMP Europe Ltd
Pages355-358
ISBN (Print)0-86213-148-0, 978-0-86213-148-7
Publication statusPublished - 2001
MoE publication typeA4 Article in a conference publication
Event31st European Microwave Conference, EuMC 2001 - London, United Kingdom
Duration: 25 Sep 200127 Sep 2001
Conference number: 31

Conference

Conference31st European Microwave Conference, EuMC 2001
Abbreviated titleEuMC 2001
CountryUnited Kingdom
CityLondon
Period25/09/0127/09/01

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    Vähä-Heikkilä, T., Lahdes, M., Varis, J., Kantanen, M., Tuovinen, J., Karttaavi, T., & Hakojärvi, H. (2001). W-band on-wafer noise parameter measurements. In 31st European Microwave Conference (pp. 355-358). CMP Europe Ltd.