W-band on-wafer noise parameter measurements

Tauno Vähä-Heikkilä; Manu Lahdes; Jussi Varis; Mikko Kantanen; Jussi Tuovinen; Timo Karttaavi; Hannu Hakojärvi

W-band on-wafer noise parameter measurements

Tauno Vähä-Heikkilä, Manu Lahdes, Jussi Varis, Mikko Kantanen, Jussi Tuovinen, Timo Karttaavi, Hannu Hakojärvi

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

1 Citation (Scopus)

Abstract

Several current and planned space missions for earth observation and astronomy require very low noise receivers at W-band. Key components in W-band low noise receivers are the InP low noise amplifiers (LNA). The design of LNAs is a greatly dependent at the availability of good noise models for the devices used in the LNAs. To characterise devices at W-band an on-wafer noise parameter set-up has been developed and is presented here. Using the set-up the noise parameters of an InP HEMT in the frequency band 79-94 GHz have been measured. These are the first reported noise parameter measurements of active devices at W-band. The measurement set-up is based on the cold-source method.

Original language	English
Title of host publication	31st European Microwave Conference
Publisher	CMP Europe Ltd
Pages	355-358
ISBN (Print)	0-86213-148-0, 978-0-86213-148-7
Publication status	Published - 2001
MoE publication type	A4 Article in a conference publication
Event	31st European Microwave Conference, EuMC 2001 - London, United Kingdom Duration: 25 Sept 2001 → 27 Sept 2001 Conference number: 31

Conference

Conference	31st European Microwave Conference, EuMC 2001
Abbreviated title	EuMC 2001
Country/Territory	United Kingdom
City	London
Period	25/09/01 → 27/09/01

Cite this

@inproceedings{3b4834ccc1894012b88d1fc49298ed50,

title = "W-band on-wafer noise parameter measurements",

abstract = "Several current and planned space missions for earth observation and astronomy require very low noise receivers at W-band. Key components in W-band low noise receivers are the InP low noise amplifiers (LNA). The design of LNAs is a greatly dependent at the availability of good noise models for the devices used in the LNAs. To characterise devices at W-band an on-wafer noise parameter set-up has been developed and is presented here. Using the set-up the noise parameters of an InP HEMT in the frequency band 79-94 GHz have been measured. These are the first reported noise parameter measurements of active devices at W-band. The measurement set-up is based on the cold-source method.",

author = "Tauno V{\"a}h{\"a}-Heikkil{\"a} and Manu Lahdes and Jussi Varis and Mikko Kantanen and Jussi Tuovinen and Timo Karttaavi and Hannu Hakoj{\"a}rvi",

year = "2001",

language = "English",

isbn = "0-86213-148-0",

pages = "355--358",

booktitle = "31st European Microwave Conference",

publisher = "CMP Europe Ltd",

address = "United Kingdom",

note = "31st European Microwave Conference, EuMC 2001, EuMC 2001 ; Conference date: 25-09-2001 Through 27-09-2001",

}

TY - GEN

T1 - W-band on-wafer noise parameter measurements

AU - Vähä-Heikkilä, Tauno

AU - Lahdes, Manu

AU - Varis, Jussi

AU - Kantanen, Mikko

AU - Tuovinen, Jussi

AU - Karttaavi, Timo

AU - Hakojärvi, Hannu

N1 - Conference code: 31

PY - 2001

Y1 - 2001

N2 - Several current and planned space missions for earth observation and astronomy require very low noise receivers at W-band. Key components in W-band low noise receivers are the InP low noise amplifiers (LNA). The design of LNAs is a greatly dependent at the availability of good noise models for the devices used in the LNAs. To characterise devices at W-band an on-wafer noise parameter set-up has been developed and is presented here. Using the set-up the noise parameters of an InP HEMT in the frequency band 79-94 GHz have been measured. These are the first reported noise parameter measurements of active devices at W-band. The measurement set-up is based on the cold-source method.

AB - Several current and planned space missions for earth observation and astronomy require very low noise receivers at W-band. Key components in W-band low noise receivers are the InP low noise amplifiers (LNA). The design of LNAs is a greatly dependent at the availability of good noise models for the devices used in the LNAs. To characterise devices at W-band an on-wafer noise parameter set-up has been developed and is presented here. Using the set-up the noise parameters of an InP HEMT in the frequency band 79-94 GHz have been measured. These are the first reported noise parameter measurements of active devices at W-band. The measurement set-up is based on the cold-source method.

M3 - Conference article in proceedings

SN - 0-86213-148-0

SN - 978-0-86213-148-7

SP - 355

EP - 358

BT - 31st European Microwave Conference

PB - CMP Europe Ltd

T2 - 31st European Microwave Conference, EuMC 2001

Y2 - 25 September 2001 through 27 September 2001

ER -

W-band on-wafer noise parameter measurements

Abstract

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