W-band on-wafer noise parameter measurements

Tauno Vähä-Heikkilä, Manu Lahdes, Jussi Varis, Mikko Kantanen, Jussi Tuovinen, Timo Karttaavi, Hannu Hakojärvi

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    1 Citation (Scopus)


    Several current and planned space missions for earth observation and astronomy require very low noise receivers at W-band. Key components in W-band low noise receivers are the InP low noise amplifiers (LNA). The design of LNAs is a greatly dependent at the availability of good noise models for the devices used in the LNAs. To characterise devices at W-band an on-wafer noise parameter set-up has been developed and is presented here. Using the set-up the noise parameters of an InP HEMT in the frequency band 79-94 GHz have been measured. These are the first reported noise parameter measurements of active devices at W-band. The measurement set-up is based on the cold-source method.
    Original languageEnglish
    Title of host publication31st European Microwave Conference
    PublisherCMP Europe Ltd
    ISBN (Print)0-86213-148-0, 978-0-86213-148-7
    Publication statusPublished - 2001
    MoE publication typeA4 Article in a conference publication
    Event31st European Microwave Conference, EuMC 2001 - London, United Kingdom
    Duration: 25 Sept 200127 Sept 2001
    Conference number: 31


    Conference31st European Microwave Conference, EuMC 2001
    Abbreviated titleEuMC 2001
    Country/TerritoryUnited Kingdom


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