Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 2849-2853 |
| Number of pages | 5 |
| Journal | Microwave and Optical Technology Letters |
| Volume | 55 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2013 |
| MoE publication type | A1 Journal article-refereed |
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Keywords
- Dicke switch network
- Gallium Arsenide
- monolithic microwave integrated circuit
- radio frequency microelectro-mechanical-systems
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W-band RF-MEMS dicke switch networks in a GaAs MMIC process. / Reyaz, S.B. (Corresponding Author); Samuelsson, C.; Malmqvist, R.; Seok, S.; Fryziel, M.; Rolland, P.-A.; Grandchamp, B.; Rantakari, Pekka; Vähä-Heikkilä, Tauno.
In: Microwave and Optical Technology Letters, Vol. 55, No. 12, 2013, p. 2849-2853.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - W-band RF-MEMS dicke switch networks in a GaAs MMIC process
AU - Reyaz, S.B.
AU - Samuelsson, C.
AU - Malmqvist, R.
AU - Seok, S.
AU - Fryziel, M.
AU - Rolland, P.-A.
AU - Grandchamp, B.
AU - Rantakari, Pekka
AU - Vähä-Heikkilä, Tauno
PY - 2013
Y1 - 2013
N2 - A novel design of a W‐band RF‐microelectro‐mechanical‐system (RF‐MEMS) Dicke switch network realized in a GaAs monolithic microwave integrated circuit process is presented in this article (including a BenzoCycloButene cap type of 0‐level package used as protection during wafer dicing). Such fabricated GaAs MEMS Dicke switch circuits show transmission losses of 1.3–1.7 dB (uncapped on‐wafer), 1.6–2.0 dB (uncapped chips), and 1.8–2.7 dB (0‐level packaged chips) at 70–96 GHz. Corresponding measured maximum values of switch isolation equal 23, 26, and 27 dB, respectively. To the authors' knowledge, these are the first reported uncapped and wafer‐level packaged W‐band low loss/DC power and high isolation/linearity RF‐MEMS Dicke switch circuits made in a GaAs foundry process.
AB - A novel design of a W‐band RF‐microelectro‐mechanical‐system (RF‐MEMS) Dicke switch network realized in a GaAs monolithic microwave integrated circuit process is presented in this article (including a BenzoCycloButene cap type of 0‐level package used as protection during wafer dicing). Such fabricated GaAs MEMS Dicke switch circuits show transmission losses of 1.3–1.7 dB (uncapped on‐wafer), 1.6–2.0 dB (uncapped chips), and 1.8–2.7 dB (0‐level packaged chips) at 70–96 GHz. Corresponding measured maximum values of switch isolation equal 23, 26, and 27 dB, respectively. To the authors' knowledge, these are the first reported uncapped and wafer‐level packaged W‐band low loss/DC power and high isolation/linearity RF‐MEMS Dicke switch circuits made in a GaAs foundry process.
KW - Dicke switch network
KW - Gallium Arsenide
KW - monolithic microwave integrated circuit
KW - radio frequency microelectro-mechanical-systems
U2 - 10.1002/mop.27983
DO - 10.1002/mop.27983
M3 - Article
VL - 55
SP - 2849
EP - 2853
JO - Microwave and Optical Technology Letters
JF - Microwave and Optical Technology Letters
SN - 0895-2477
IS - 12
ER -