Abstract
A novel design of a W‐band RF‐microelectro‐mechanical‐system (RF‐MEMS) Dicke switch network realized in a GaAs monolithic microwave integrated circuit process is presented in this article (including a BenzoCycloButene cap type of 0‐level package used as protection during wafer dicing). Such fabricated GaAs MEMS Dicke switch circuits show transmission losses of 1.3–1.7 dB (uncapped on‐wafer), 1.6–2.0 dB (uncapped chips), and 1.8–2.7 dB (0‐level packaged chips) at 70–96 GHz. Corresponding measured maximum values of switch isolation equal 23, 26, and 27 dB, respectively. To the authors' knowledge, these are the first reported uncapped and wafer‐level packaged W‐band low loss/DC power and high isolation/linearity RF‐MEMS Dicke switch circuits made in a GaAs foundry process.
| Original language | English |
|---|---|
| Pages (from-to) | 2849-2853 |
| Number of pages | 5 |
| Journal | Microwave and Optical Technology Letters |
| Volume | 55 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2013 |
| MoE publication type | A1 Journal article-refereed |
Keywords
- Dicke switch network
- Gallium Arsenide
- monolithic microwave integrated circuit
- radio frequency microelectro-mechanical-systems
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Reyaz, S. B., Samuelsson, C., Malmqvist, R., Seok, S., Fryziel, M., Rolland, P-A., Grandchamp, B., Rantakari, P., & Vähä-Heikkilä, T. (2013). W-band RF-MEMS dicke switch networks in a GaAs MMIC process. Microwave and Optical Technology Letters, 55(12), 2849-2853. https://doi.org/10.1002/mop.27983