W-band RF-MEMS dicke switch networks in a GaAs MMIC process

Shakila Bint Reyaz; Carl Samuelsson; Robert Malmqvist; Seonho Seok; Michel Fryziel; Paul-Allain Rolland; B. Grandchamp; Pekka Rantakari; Tauno Vähä-Heikkilä

doi:10.1002/mop.27983

W-band RF-MEMS dicke switch networks in a GaAs MMIC process

Shakila Bint Reyaz^*, Carl Samuelsson, Robert Malmqvist, Seonho Seok, Michel Fryziel, Paul-Allain Rolland, B. Grandchamp, Pekka Rantakari, Tauno Vähä-Heikkilä

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

Abstract

A novel design of a W‐band RF‐microelectro‐mechanical‐system (RF‐MEMS) Dicke switch network realized in a GaAs monolithic microwave integrated circuit process is presented in this article (including a BenzoCycloButene cap type of 0‐level package used as protection during wafer dicing). Such fabricated GaAs MEMS Dicke switch circuits show transmission losses of 1.3–1.7 dB (uncapped on‐wafer), 1.6–2.0 dB (uncapped chips), and 1.8–2.7 dB (0‐level packaged chips) at 70–96 GHz. Corresponding measured maximum values of switch isolation equal 23, 26, and 27 dB, respectively. To the authors' knowledge, these are the first reported uncapped and wafer‐level packaged W‐band low loss/DC power and high isolation/linearity RF‐MEMS Dicke switch circuits made in a GaAs foundry process.

Original language	English
Pages (from-to)	2849-2853
Journal	Microwave and Optical Technology Letters
Volume	55
Issue number	12
DOIs	https://doi.org/10.1002/mop.27983
Publication status	Published - 2013
MoE publication type	A1 Journal article-refereed

Keywords

Dicke switch network
Gallium Arsenide
monolithic microwave integrated circuit
radio frequency microelectro-mechanical-systems

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10.1002/mop.27983

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title = "W-band RF-MEMS dicke switch networks in a GaAs MMIC process",

abstract = "A novel design of a W‐band RF‐microelectro‐mechanical‐system (RF‐MEMS) Dicke switch network realized in a GaAs monolithic microwave integrated circuit process is presented in this article (including a BenzoCycloButene cap type of 0‐level package used as protection during wafer dicing). Such fabricated GaAs MEMS Dicke switch circuits show transmission losses of 1.3–1.7 dB (uncapped on‐wafer), 1.6–2.0 dB (uncapped chips), and 1.8–2.7 dB (0‐level packaged chips) at 70–96 GHz. Corresponding measured maximum values of switch isolation equal 23, 26, and 27 dB, respectively. To the authors' knowledge, these are the first reported uncapped and wafer‐level packaged W‐band low loss/DC power and high isolation/linearity RF‐MEMS Dicke switch circuits made in a GaAs foundry process.",

keywords = "Dicke switch network, Gallium Arsenide, monolithic microwave integrated circuit, radio frequency microelectro-mechanical-systems",

author = "Reyaz, {Shakila Bint} and Carl Samuelsson and Robert Malmqvist and Seonho Seok and Michel Fryziel and Paul-Allain Rolland and B. Grandchamp and Pekka Rantakari and Tauno V{\"a}h{\"a}-Heikkil{\"a}",

year = "2013",

doi = "10.1002/mop.27983",

language = "English",

volume = "55",

pages = "2849--2853",

journal = "Microwave and Optical Technology Letters",

issn = "0895-2477",

publisher = "John Wiley & Sons Inc.",

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TY - JOUR

T1 - W-band RF-MEMS dicke switch networks in a GaAs MMIC process

AU - Reyaz, Shakila Bint

AU - Samuelsson, Carl

AU - Malmqvist, Robert

AU - Seok, Seonho

AU - Fryziel, Michel

AU - Rolland, Paul-Allain

AU - Grandchamp, B.

AU - Rantakari, Pekka

AU - Vähä-Heikkilä, Tauno

PY - 2013

Y1 - 2013

N2 - A novel design of a W‐band RF‐microelectro‐mechanical‐system (RF‐MEMS) Dicke switch network realized in a GaAs monolithic microwave integrated circuit process is presented in this article (including a BenzoCycloButene cap type of 0‐level package used as protection during wafer dicing). Such fabricated GaAs MEMS Dicke switch circuits show transmission losses of 1.3–1.7 dB (uncapped on‐wafer), 1.6–2.0 dB (uncapped chips), and 1.8–2.7 dB (0‐level packaged chips) at 70–96 GHz. Corresponding measured maximum values of switch isolation equal 23, 26, and 27 dB, respectively. To the authors' knowledge, these are the first reported uncapped and wafer‐level packaged W‐band low loss/DC power and high isolation/linearity RF‐MEMS Dicke switch circuits made in a GaAs foundry process.

AB - A novel design of a W‐band RF‐microelectro‐mechanical‐system (RF‐MEMS) Dicke switch network realized in a GaAs monolithic microwave integrated circuit process is presented in this article (including a BenzoCycloButene cap type of 0‐level package used as protection during wafer dicing). Such fabricated GaAs MEMS Dicke switch circuits show transmission losses of 1.3–1.7 dB (uncapped on‐wafer), 1.6–2.0 dB (uncapped chips), and 1.8–2.7 dB (0‐level packaged chips) at 70–96 GHz. Corresponding measured maximum values of switch isolation equal 23, 26, and 27 dB, respectively. To the authors' knowledge, these are the first reported uncapped and wafer‐level packaged W‐band low loss/DC power and high isolation/linearity RF‐MEMS Dicke switch circuits made in a GaAs foundry process.

KW - Dicke switch network

KW - Gallium Arsenide

KW - monolithic microwave integrated circuit

KW - radio frequency microelectro-mechanical-systems

U2 - 10.1002/mop.27983

DO - 10.1002/mop.27983

M3 - Article

SN - 0895-2477

VL - 55

SP - 2849

EP - 2853

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 12

ER -

W-band RF-MEMS dicke switch networks in a GaAs MMIC process

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Keywords

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