W-band RF-MEMS dicke switch networks in a GaAs MMIC process

S.B. Reyaz (Corresponding Author), C. Samuelsson, R. Malmqvist, S. Seok, M. Fryziel, P.-A. Rolland, B. Grandchamp, Pekka Rantakari, Tauno Vähä-Heikkilä

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

A novel design of a W‐band RF‐microelectro‐mechanical‐system (RF‐MEMS) Dicke switch network realized in a GaAs monolithic microwave integrated circuit process is presented in this article (including a BenzoCycloButene cap type of 0‐level package used as protection during wafer dicing). Such fabricated GaAs MEMS Dicke switch circuits show transmission losses of 1.3–1.7 dB (uncapped on‐wafer), 1.6–2.0 dB (uncapped chips), and 1.8–2.7 dB (0‐level packaged chips) at 70–96 GHz. Corresponding measured maximum values of switch isolation equal 23, 26, and 27 dB, respectively. To the authors' knowledge, these are the first reported uncapped and wafer‐level packaged W‐band low loss/DC power and high isolation/linearity RF‐MEMS Dicke switch circuits made in a GaAs foundry process.
Original languageEnglish
Pages (from-to)2849-2853
Number of pages5
JournalMicrowave and Optical Technology Letters
Volume55
Issue number12
DOIs
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

Fingerprint

Monolithic microwave integrated circuits
microelectromechanical systems
MEMS
switches
Switches
isolation
chips
foundries
microwave circuits
Networks (circuits)
transmission loss
Foundries
caps
linearity
integrated circuits
direct current
wafers
gallium arsenide

Keywords

  • Dicke switch network
  • Gallium Arsenide
  • monolithic microwave integrated circuit
  • radio frequency microelectro-mechanical-systems

Cite this

Reyaz, S. B., Samuelsson, C., Malmqvist, R., Seok, S., Fryziel, M., Rolland, P-A., ... Vähä-Heikkilä, T. (2013). W-band RF-MEMS dicke switch networks in a GaAs MMIC process. Microwave and Optical Technology Letters, 55(12), 2849-2853. https://doi.org/10.1002/mop.27983
Reyaz, S.B. ; Samuelsson, C. ; Malmqvist, R. ; Seok, S. ; Fryziel, M. ; Rolland, P.-A. ; Grandchamp, B. ; Rantakari, Pekka ; Vähä-Heikkilä, Tauno. / W-band RF-MEMS dicke switch networks in a GaAs MMIC process. In: Microwave and Optical Technology Letters. 2013 ; Vol. 55, No. 12. pp. 2849-2853.
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abstract = "A novel design of a W‐band RF‐microelectro‐mechanical‐system (RF‐MEMS) Dicke switch network realized in a GaAs monolithic microwave integrated circuit process is presented in this article (including a BenzoCycloButene cap type of 0‐level package used as protection during wafer dicing). Such fabricated GaAs MEMS Dicke switch circuits show transmission losses of 1.3–1.7 dB (uncapped on‐wafer), 1.6–2.0 dB (uncapped chips), and 1.8–2.7 dB (0‐level packaged chips) at 70–96 GHz. Corresponding measured maximum values of switch isolation equal 23, 26, and 27 dB, respectively. To the authors' knowledge, these are the first reported uncapped and wafer‐level packaged W‐band low loss/DC power and high isolation/linearity RF‐MEMS Dicke switch circuits made in a GaAs foundry process.",
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Reyaz, SB, Samuelsson, C, Malmqvist, R, Seok, S, Fryziel, M, Rolland, P-A, Grandchamp, B, Rantakari, P & Vähä-Heikkilä, T 2013, 'W-band RF-MEMS dicke switch networks in a GaAs MMIC process', Microwave and Optical Technology Letters, vol. 55, no. 12, pp. 2849-2853. https://doi.org/10.1002/mop.27983

W-band RF-MEMS dicke switch networks in a GaAs MMIC process. / Reyaz, S.B. (Corresponding Author); Samuelsson, C.; Malmqvist, R.; Seok, S.; Fryziel, M.; Rolland, P.-A.; Grandchamp, B.; Rantakari, Pekka; Vähä-Heikkilä, Tauno.

In: Microwave and Optical Technology Letters, Vol. 55, No. 12, 2013, p. 2849-2853.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - W-band RF-MEMS dicke switch networks in a GaAs MMIC process

AU - Reyaz, S.B.

AU - Samuelsson, C.

AU - Malmqvist, R.

AU - Seok, S.

AU - Fryziel, M.

AU - Rolland, P.-A.

AU - Grandchamp, B.

AU - Rantakari, Pekka

AU - Vähä-Heikkilä, Tauno

PY - 2013

Y1 - 2013

N2 - A novel design of a W‐band RF‐microelectro‐mechanical‐system (RF‐MEMS) Dicke switch network realized in a GaAs monolithic microwave integrated circuit process is presented in this article (including a BenzoCycloButene cap type of 0‐level package used as protection during wafer dicing). Such fabricated GaAs MEMS Dicke switch circuits show transmission losses of 1.3–1.7 dB (uncapped on‐wafer), 1.6–2.0 dB (uncapped chips), and 1.8–2.7 dB (0‐level packaged chips) at 70–96 GHz. Corresponding measured maximum values of switch isolation equal 23, 26, and 27 dB, respectively. To the authors' knowledge, these are the first reported uncapped and wafer‐level packaged W‐band low loss/DC power and high isolation/linearity RF‐MEMS Dicke switch circuits made in a GaAs foundry process.

AB - A novel design of a W‐band RF‐microelectro‐mechanical‐system (RF‐MEMS) Dicke switch network realized in a GaAs monolithic microwave integrated circuit process is presented in this article (including a BenzoCycloButene cap type of 0‐level package used as protection during wafer dicing). Such fabricated GaAs MEMS Dicke switch circuits show transmission losses of 1.3–1.7 dB (uncapped on‐wafer), 1.6–2.0 dB (uncapped chips), and 1.8–2.7 dB (0‐level packaged chips) at 70–96 GHz. Corresponding measured maximum values of switch isolation equal 23, 26, and 27 dB, respectively. To the authors' knowledge, these are the first reported uncapped and wafer‐level packaged W‐band low loss/DC power and high isolation/linearity RF‐MEMS Dicke switch circuits made in a GaAs foundry process.

KW - Dicke switch network

KW - Gallium Arsenide

KW - monolithic microwave integrated circuit

KW - radio frequency microelectro-mechanical-systems

U2 - 10.1002/mop.27983

DO - 10.1002/mop.27983

M3 - Article

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JO - Microwave and Optical Technology Letters

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SN - 0895-2477

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Reyaz SB, Samuelsson C, Malmqvist R, Seok S, Fryziel M, Rolland P-A et al. W-band RF-MEMS dicke switch networks in a GaAs MMIC process. Microwave and Optical Technology Letters. 2013;55(12):2849-2853. https://doi.org/10.1002/mop.27983