W-band RF-MEMS dicke switch networks in a GaAs MMIC process

S.B. Reyaz (Corresponding Author), C. Samuelsson, R. Malmqvist, S. Seok, M. Fryziel, P.-A. Rolland, B. Grandchamp, Pekka Rantakari, Tauno Vähä-Heikkilä

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2 Citations (Scopus)

Abstract

A novel design of a W‐band RF‐microelectro‐mechanical‐system (RF‐MEMS) Dicke switch network realized in a GaAs monolithic microwave integrated circuit process is presented in this article (including a BenzoCycloButene cap type of 0‐level package used as protection during wafer dicing). Such fabricated GaAs MEMS Dicke switch circuits show transmission losses of 1.3–1.7 dB (uncapped on‐wafer), 1.6–2.0 dB (uncapped chips), and 1.8–2.7 dB (0‐level packaged chips) at 70–96 GHz. Corresponding measured maximum values of switch isolation equal 23, 26, and 27 dB, respectively. To the authors' knowledge, these are the first reported uncapped and wafer‐level packaged W‐band low loss/DC power and high isolation/linearity RF‐MEMS Dicke switch circuits made in a GaAs foundry process.
Original languageEnglish
Pages (from-to)2849-2853
Number of pages5
JournalMicrowave and Optical Technology Letters
Volume55
Issue number12
DOIs
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

Keywords

  • Dicke switch network
  • Gallium Arsenide
  • monolithic microwave integrated circuit
  • radio frequency microelectro-mechanical-systems

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    Reyaz, S. B., Samuelsson, C., Malmqvist, R., Seok, S., Fryziel, M., Rolland, P-A., Grandchamp, B., Rantakari, P., & Vähä-Heikkilä, T. (2013). W-band RF-MEMS dicke switch networks in a GaAs MMIC process. Microwave and Optical Technology Letters, 55(12), 2849-2853. https://doi.org/10.1002/mop.27983