W-band RF MEMS double and triple-stub impedance tuners

Tauno Vähä-Heikkilä, Jussi Varis, Jussi Tuovinen, G.M. Rebeiz

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    32 Citations (Scopus)


    Reconfigurable integrated impedance tuners have been developed for W-Band on-wafer noise parameter and load-pull measurement applications. The impedance tuners are based on double and triple-stub topologies and employ 11 switched MEMS capacitors producing 2048 (2¹¹) different impedances. Measured |Gamma MAX| for the double-stub tuner is 0.92 and 0.82 at 75 and 100 GHz from 110 measurements out of 2048 possible impedances, and 0.92 and 0.83 for the triple-stub tuner. To our knowledge, this represents the first W-band integrated impedance tuner to date.
    Original languageEnglish
    Title of host publicationIEEE MTT-S International Microwave Symposium Digest 2005
    PublisherIEEE Institute of Electrical and Electronic Engineers
    ISBN (Print)978-0-7803-8845-1
    Publication statusPublished - 2005
    MoE publication typeA4 Article in a conference publication
    Event2005 IEEE MTT-S International Microwave Symposium - Long Beach, United States
    Duration: 12 Jun 200517 Jun 2005


    Conference2005 IEEE MTT-S International Microwave Symposium
    Country/TerritoryUnited States
    CityLong Beach


    • RF MEMS
    • impedance tuner
    • matching network
    • noise parameter
    • load-pull
    • on-wafer


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