W-band RF MEMS double and triple-stub impedance tuners

Tauno Vähä-Heikkilä, Jussi Varis, Jussi Tuovinen, G.M. Rebeiz

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

26 Citations (Scopus)

Abstract

Reconfigurable integrated impedance tuners have been developed for W-Band on-wafer noise parameter and load-pull measurement applications. The impedance tuners are based on double and triple-stub topologies and employ 11 switched MEMS capacitors producing 2048 (2¹¹) different impedances. Measured |Gamma MAX| for the double-stub tuner is 0.92 and 0.82 at 75 and 100 GHz from 110 measurements out of 2048 possible impedances, and 0.92 and 0.83 for the triple-stub tuner. To our knowledge, this represents the first W-band integrated impedance tuner to date.
Original languageEnglish
Title of host publicationProceedings of the IEEE MTT-S International Microwave Symposium
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages923-926
ISBN (Print)0-7803-8845-3
DOIs
Publication statusPublished - 2005
MoE publication typeA4 Article in a conference publication
EventIEEE MTT-S International Microwave Symposium - Long Beach, United States
Duration: 12 Jun 200517 Jun 2005

Conference

ConferenceIEEE MTT-S International Microwave Symposium
CountryUnited States
CityLong Beach
Period12/06/0517/06/05

Keywords

  • RF MEMS
  • impedance tuner
  • matching network
  • noise parameter
  • load-pull
  • on-wafer

Fingerprint Dive into the research topics of 'W-band RF MEMS double and triple-stub impedance tuners'. Together they form a unique fingerprint.

  • Cite this

    Vähä-Heikkilä, T., Varis, J., Tuovinen, J., & Rebeiz, G. M. (2005). W-band RF MEMS double and triple-stub impedance tuners. In Proceedings of the IEEE MTT-S International Microwave Symposium (pp. 923-926). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/MWSYM.2005.1516774