W-band RF MEMS double and triple-stub impedance tuners

Tauno Vähä-Heikkilä; Jussi Varis; Jussi Tuovinen; G.M. Rebeiz

doi:10.1109/MWSYM.2005.1516774

W-band RF MEMS double and triple-stub impedance tuners

Tauno Vähä-Heikkilä, Jussi Varis, Jussi Tuovinen, G.M. Rebeiz

University of Michigan–Ann Arbor

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

32 Citations (Scopus)

Abstract

Reconfigurable integrated impedance tuners have been developed for W-Band on-wafer noise parameter and load-pull measurement applications. The impedance tuners are based on double and triple-stub topologies and employ 11 switched MEMS capacitors producing 2048 (2¹¹) different impedances. Measured |Gamma MAX| for the double-stub tuner is 0.92 and 0.82 at 75 and 100 GHz from 110 measurements out of 2048 possible impedances, and 0.92 and 0.83 for the triple-stub tuner. To our knowledge, this represents the first W-band integrated impedance tuner to date.

Original language	English
Title of host publication	IEEE MTT-S International Microwave Symposium Digest 2005
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	923-926
ISBN (Print)	978-0-7803-8845-1
DOIs	https://doi.org/10.1109/MWSYM.2005.1516774
Publication status	Published - 2005
MoE publication type	A4 Article in a conference publication
Event	2005 IEEE MTT-S International Microwave Symposium - Long Beach, United States Duration: 12 Jun 2005 → 17 Jun 2005

Conference

Conference	2005 IEEE MTT-S International Microwave Symposium
Country/Territory	United States
City	Long Beach
Period	12/06/05 → 17/06/05

Keywords

RF MEMS
impedance tuner
matching network
noise parameter
load-pull
on-wafer

Access to Document

10.1109/MWSYM.2005.1516774

Cite this

@inproceedings{adec862b34cc49adba30f50dcb2a2f4c,

title = "W-band RF MEMS double and triple-stub impedance tuners",

abstract = "Reconfigurable integrated impedance tuners have been developed for W-Band on-wafer noise parameter and load-pull measurement applications. The impedance tuners are based on double and triple-stub topologies and employ 11 switched MEMS capacitors producing 2048 (2¹¹) different impedances. Measured |Gamma MAX| for the double-stub tuner is 0.92 and 0.82 at 75 and 100 GHz from 110 measurements out of 2048 possible impedances, and 0.92 and 0.83 for the triple-stub tuner. To our knowledge, this represents the first W-band integrated impedance tuner to date.",

keywords = "RF MEMS, impedance tuner, matching network, noise parameter, load-pull, on-wafer",

author = "Tauno V{\"a}h{\"a}-Heikkil{\"a} and Jussi Varis and Jussi Tuovinen and G.M. Rebeiz",

year = "2005",

doi = "10.1109/MWSYM.2005.1516774",

language = "English",

isbn = "978-0-7803-8845-1",

pages = "923--926",

booktitle = "IEEE MTT-S International Microwave Symposium Digest 2005",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "2005 IEEE MTT-S International Microwave Symposium ; Conference date: 12-06-2005 Through 17-06-2005",

}

Vähä-Heikkilä, T , Varis, J, Tuovinen, J & Rebeiz, GM 2005, W-band RF MEMS double and triple-stub impedance tuners. in IEEE MTT-S International Microwave Symposium Digest 2005. IEEE Institute of Electrical and Electronic Engineers, pp. 923-926, 2005 IEEE MTT-S International Microwave Symposium, Long Beach, California, United States, 12/06/05. https://doi.org/10.1109/MWSYM.2005.1516774

W-band RF MEMS double and triple-stub impedance tuners. / Vähä-Heikkilä, Tauno ; Varis, Jussi; Tuovinen, Jussi et al.
IEEE MTT-S International Microwave Symposium Digest 2005. IEEE Institute of Electrical and Electronic Engineers, 2005. p. 923-926.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - W-band RF MEMS double and triple-stub impedance tuners

AU - Vähä-Heikkilä, Tauno

AU - Varis, Jussi

AU - Tuovinen, Jussi

AU - Rebeiz, G.M.

PY - 2005

Y1 - 2005

N2 - Reconfigurable integrated impedance tuners have been developed for W-Band on-wafer noise parameter and load-pull measurement applications. The impedance tuners are based on double and triple-stub topologies and employ 11 switched MEMS capacitors producing 2048 (2¹¹) different impedances. Measured |Gamma MAX| for the double-stub tuner is 0.92 and 0.82 at 75 and 100 GHz from 110 measurements out of 2048 possible impedances, and 0.92 and 0.83 for the triple-stub tuner. To our knowledge, this represents the first W-band integrated impedance tuner to date.

AB - Reconfigurable integrated impedance tuners have been developed for W-Band on-wafer noise parameter and load-pull measurement applications. The impedance tuners are based on double and triple-stub topologies and employ 11 switched MEMS capacitors producing 2048 (2¹¹) different impedances. Measured |Gamma MAX| for the double-stub tuner is 0.92 and 0.82 at 75 and 100 GHz from 110 measurements out of 2048 possible impedances, and 0.92 and 0.83 for the triple-stub tuner. To our knowledge, this represents the first W-band integrated impedance tuner to date.

KW - RF MEMS

KW - impedance tuner

KW - matching network

KW - noise parameter

KW - load-pull

KW - on-wafer

U2 - 10.1109/MWSYM.2005.1516774

DO - 10.1109/MWSYM.2005.1516774

M3 - Conference article in proceedings

SN - 978-0-7803-8845-1

SP - 923

EP - 926

BT - IEEE MTT-S International Microwave Symposium Digest 2005

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 2005 IEEE MTT-S International Microwave Symposium

Y2 - 12 June 2005 through 17 June 2005

ER -

W-band RF MEMS double and triple-stub impedance tuners

Abstract

Conference

Keywords

Access to Document

Fingerprint

Cite this