W-band RF MEMS double and triple-stub impedance tuners

Tauno Vähä-Heikkilä; Jussi Varis; Jussi Tuovinen; G.M. Rebeiz

doi:10.1109/MWSYM.2005.1516774

W-band RF MEMS double and triple-stub impedance tuners

Tauno Vähä-Heikkilä, Jussi Varis, Jussi Tuovinen, G.M. Rebeiz

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

26 Citations (Scopus)

Abstract

Reconfigurable integrated impedance tuners have been developed for W-Band on-wafer noise parameter and load-pull measurement applications. The impedance tuners are based on double and triple-stub topologies and employ 11 switched MEMS capacitors producing 2048 (2¹¹) different impedances. Measured |Gamma MAX| for the double-stub tuner is 0.92 and 0.82 at 75 and 100 GHz from 110 measurements out of 2048 possible impedances, and 0.92 and 0.83 for the triple-stub tuner. To our knowledge, this represents the first W-band integrated impedance tuner to date.

Original language	English
Title of host publication	Proceedings of the IEEE MTT-S International Microwave Symposium
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	923-926
ISBN (Print)	0-7803-8845-3
DOIs	https://doi.org/10.1109/MWSYM.2005.1516774
Publication status	Published - 2005
MoE publication type	A4 Article in a conference publication
Event	IEEE MTT-S International Microwave Symposium - Long Beach, United States Duration: 12 Jun 2005 → 17 Jun 2005

Conference

Conference	IEEE MTT-S International Microwave Symposium
Country	United States
City	Long Beach
Period	12/06/05 → 17/06/05

Keywords

RF MEMS
impedance tuner
matching network
noise parameter
load-pull
on-wafer

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title = "W-band RF MEMS double and triple-stub impedance tuners",

abstract = "Reconfigurable integrated impedance tuners have been developed for W-Band on-wafer noise parameter and load-pull measurement applications. The impedance tuners are based on double and triple-stub topologies and employ 11 switched MEMS capacitors producing 2048 (2¹¹) different impedances. Measured |Gamma MAX| for the double-stub tuner is 0.92 and 0.82 at 75 and 100 GHz from 110 measurements out of 2048 possible impedances, and 0.92 and 0.83 for the triple-stub tuner. To our knowledge, this represents the first W-band integrated impedance tuner to date.",

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booktitle = "Proceedings of the IEEE MTT-S International Microwave Symposium",

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Vähä-Heikkilä, T , Varis, J, Tuovinen, J & Rebeiz, GM 2005, W-band RF MEMS double and triple-stub impedance tuners. in Proceedings of the IEEE MTT-S International Microwave Symposium. IEEE Institute of Electrical and Electronic Engineers, pp. 923-926, IEEE MTT-S International Microwave Symposium, Long Beach, United States, 12/06/05. https://doi.org/10.1109/MWSYM.2005.1516774

W-band RF MEMS double and triple-stub impedance tuners. / Vähä-Heikkilä, Tauno ; Varis, Jussi; Tuovinen, Jussi; Rebeiz, G.M.

Proceedings of the IEEE MTT-S International Microwave Symposium. IEEE Institute of Electrical and Electronic Engineers, 2005. p. 923-926.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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AB - Reconfigurable integrated impedance tuners have been developed for W-Band on-wafer noise parameter and load-pull measurement applications. The impedance tuners are based on double and triple-stub topologies and employ 11 switched MEMS capacitors producing 2048 (2¹¹) different impedances. Measured |Gamma MAX| for the double-stub tuner is 0.92 and 0.82 at 75 and 100 GHz from 110 measurements out of 2048 possible impedances, and 0.92 and 0.83 for the triple-stub tuner. To our knowledge, this represents the first W-band integrated impedance tuner to date.

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