Wafer-Level AuSn and CuSn Bonding for MEMS Encapsulation

Tommi Suni, Hongbo Xu, V. Vuorinen, Hannele Heikkinen, S. Vähänen, Antti Jaakkola, Philippe Monnoyer, Mervi Paulasto-Kröckel

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

5 Citations (Scopus)

Abstract

In this work we have studied AuSn and CuSn Solid-Liquid Interdiffusion (SLID) bonding that can be used for wafer-level encapsulation. SLID bonding of these metal structures takes place at temperatures around 300°C but show higher re-melting temperatures because of the solid-liquid intermetallic phase transformation. 6'' silicon wafers were bonded with 60 ??m wide, electroplated, AuSn and CuSn seal ring structures. Wafer bonding temperature was varied between 300°C and 450°C, the used bonding force was 3.5 kN under the ambient pressure less than 1x10-3 mbar. The bonding quality was evaluated with different seal ring metal structures and bonding parameters
Original languageEnglish
Title of host publication2013 European Microelectronics Packaging Conference (EMPC)
Place of PublicationGrenoble
PublisherInstitute of Electrical and Electronic Engineers IEEE
ISBN (Print)978-2-9527-4671-7
Publication statusPublished - 2013
MoE publication typeNot Eligible
EventEMPC 2013: European Microelectronics and Packaging Conference - Grenoble, France
Duration: 9 Sep 201312 Sep 2013

Conference

ConferenceEMPC 2013
CountryFrance
CityGrenoble
Period9/09/1312/09/13

Fingerprint

Encapsulation
MEMS
Interdiffusion (solids)
Seals
Liquids
Metals
Wafer bonding
Silicon wafers
Intermetallics
Melting point
Phase transitions
Temperature

Keywords

  • Wafer level packaging
  • gold-tin bonding
  • copper-tin bonding
  • SLID bonding
  • MEMS encapsulation

Cite this

Suni, T., Xu, H., Vuorinen, V., Heikkinen, H., Vähänen, S., Jaakkola, A., ... Paulasto-Kröckel, M. (2013). Wafer-Level AuSn and CuSn Bonding for MEMS Encapsulation. In 2013 European Microelectronics Packaging Conference (EMPC) Grenoble: Institute of Electrical and Electronic Engineers IEEE.
Suni, Tommi ; Xu, Hongbo ; Vuorinen, V. ; Heikkinen, Hannele ; Vähänen, S. ; Jaakkola, Antti ; Monnoyer, Philippe ; Paulasto-Kröckel, Mervi. / Wafer-Level AuSn and CuSn Bonding for MEMS Encapsulation. 2013 European Microelectronics Packaging Conference (EMPC). Grenoble : Institute of Electrical and Electronic Engineers IEEE, 2013.
@inproceedings{0819c53a6a364953a3fcd1e57d5e45c9,
title = "Wafer-Level AuSn and CuSn Bonding for MEMS Encapsulation",
abstract = "In this work we have studied AuSn and CuSn Solid-Liquid Interdiffusion (SLID) bonding that can be used for wafer-level encapsulation. SLID bonding of these metal structures takes place at temperatures around 300°C but show higher re-melting temperatures because of the solid-liquid intermetallic phase transformation. 6'' silicon wafers were bonded with 60 ??m wide, electroplated, AuSn and CuSn seal ring structures. Wafer bonding temperature was varied between 300°C and 450°C, the used bonding force was 3.5 kN under the ambient pressure less than 1x10-3 mbar. The bonding quality was evaluated with different seal ring metal structures and bonding parameters",
keywords = "Wafer level packaging, gold-tin bonding, copper-tin bonding, SLID bonding, MEMS encapsulation",
author = "Tommi Suni and Hongbo Xu and V. Vuorinen and Hannele Heikkinen and S. V{\"a}h{\"a}nen and Antti Jaakkola and Philippe Monnoyer and Mervi Paulasto-Kr{\"o}ckel",
note = "CA2: TK610 CA2: TK609 Project code: 76927",
year = "2013",
language = "English",
isbn = "978-2-9527-4671-7",
booktitle = "2013 European Microelectronics Packaging Conference (EMPC)",
publisher = "Institute of Electrical and Electronic Engineers IEEE",
address = "United States",

}

Suni, T, Xu, H, Vuorinen, V, Heikkinen, H, Vähänen, S, Jaakkola, A, Monnoyer, P & Paulasto-Kröckel, M 2013, Wafer-Level AuSn and CuSn Bonding for MEMS Encapsulation. in 2013 European Microelectronics Packaging Conference (EMPC). Institute of Electrical and Electronic Engineers IEEE, Grenoble, EMPC 2013, Grenoble, France, 9/09/13.

Wafer-Level AuSn and CuSn Bonding for MEMS Encapsulation. / Suni, Tommi; Xu, Hongbo; Vuorinen, V.; Heikkinen, Hannele; Vähänen, S.; Jaakkola, Antti; Monnoyer, Philippe; Paulasto-Kröckel, Mervi.

2013 European Microelectronics Packaging Conference (EMPC). Grenoble : Institute of Electrical and Electronic Engineers IEEE, 2013.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Wafer-Level AuSn and CuSn Bonding for MEMS Encapsulation

AU - Suni, Tommi

AU - Xu, Hongbo

AU - Vuorinen, V.

AU - Heikkinen, Hannele

AU - Vähänen, S.

AU - Jaakkola, Antti

AU - Monnoyer, Philippe

AU - Paulasto-Kröckel, Mervi

N1 - CA2: TK610 CA2: TK609 Project code: 76927

PY - 2013

Y1 - 2013

N2 - In this work we have studied AuSn and CuSn Solid-Liquid Interdiffusion (SLID) bonding that can be used for wafer-level encapsulation. SLID bonding of these metal structures takes place at temperatures around 300°C but show higher re-melting temperatures because of the solid-liquid intermetallic phase transformation. 6'' silicon wafers were bonded with 60 ??m wide, electroplated, AuSn and CuSn seal ring structures. Wafer bonding temperature was varied between 300°C and 450°C, the used bonding force was 3.5 kN under the ambient pressure less than 1x10-3 mbar. The bonding quality was evaluated with different seal ring metal structures and bonding parameters

AB - In this work we have studied AuSn and CuSn Solid-Liquid Interdiffusion (SLID) bonding that can be used for wafer-level encapsulation. SLID bonding of these metal structures takes place at temperatures around 300°C but show higher re-melting temperatures because of the solid-liquid intermetallic phase transformation. 6'' silicon wafers were bonded with 60 ??m wide, electroplated, AuSn and CuSn seal ring structures. Wafer bonding temperature was varied between 300°C and 450°C, the used bonding force was 3.5 kN under the ambient pressure less than 1x10-3 mbar. The bonding quality was evaluated with different seal ring metal structures and bonding parameters

KW - Wafer level packaging

KW - gold-tin bonding

KW - copper-tin bonding

KW - SLID bonding

KW - MEMS encapsulation

M3 - Conference article in proceedings

SN - 978-2-9527-4671-7

BT - 2013 European Microelectronics Packaging Conference (EMPC)

PB - Institute of Electrical and Electronic Engineers IEEE

CY - Grenoble

ER -

Suni T, Xu H, Vuorinen V, Heikkinen H, Vähänen S, Jaakkola A et al. Wafer-Level AuSn and CuSn Bonding for MEMS Encapsulation. In 2013 European Microelectronics Packaging Conference (EMPC). Grenoble: Institute of Electrical and Electronic Engineers IEEE. 2013