Wafer-Level AuSn and CuSn Bonding for MEMS Encapsulation

Tommi Suni, Hongbo Xu, V. Vuorinen, Hannele Heikkinen, S. Vähänen, Antti Jaakkola, Philippe Monnoyer, Mervi Paulasto-Kröckel

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

5 Citations (Scopus)

Abstract

In this work we have studied AuSn and CuSn Solid-Liquid Interdiffusion (SLID) bonding that can be used for wafer-level encapsulation. SLID bonding of these metal structures takes place at temperatures around 300°C but show higher re-melting temperatures because of the solid-liquid intermetallic phase transformation. 6'' silicon wafers were bonded with 60 ??m wide, electroplated, AuSn and CuSn seal ring structures. Wafer bonding temperature was varied between 300°C and 450°C, the used bonding force was 3.5 kN under the ambient pressure less than 1x10-3 mbar. The bonding quality was evaluated with different seal ring metal structures and bonding parameters
Original languageEnglish
Title of host publication2013 European Microelectronics Packaging Conference (EMPC)
Place of PublicationGrenoble
PublisherIEEE Institute of Electrical and Electronic Engineers
ISBN (Print)978-2-9527-4671-7
Publication statusPublished - 2013
MoE publication typeNot Eligible
EventEMPC 2013: European Microelectronics and Packaging Conference - Grenoble, France
Duration: 9 Sep 201312 Sep 2013

Conference

ConferenceEMPC 2013
CountryFrance
CityGrenoble
Period9/09/1312/09/13

Keywords

  • Wafer level packaging
  • gold-tin bonding
  • copper-tin bonding
  • SLID bonding
  • MEMS encapsulation

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    Suni, T., Xu, H., Vuorinen, V., Heikkinen, H., Vähänen, S., Jaakkola, A., Monnoyer, P., & Paulasto-Kröckel, M. (2013). Wafer-Level AuSn and CuSn Bonding for MEMS Encapsulation. In 2013 European Microelectronics Packaging Conference (EMPC) IEEE Institute of Electrical and Electronic Engineers. https://ieeexplore.ieee.org/document/6698598