Abstract
In this work we have studied AuSn and CuSn Solid-Liquid
Interdiffusion (SLID) bonding that can be used
for wafer-level encapsulation. SLID bonding of these
metal structures takes place at temperatures around 300°C
but show higher re-melting temperatures because of the
solid-liquid intermetallic phase transformation. 6''
silicon wafers were bonded with 60 ??m wide,
electroplated, AuSn and CuSn seal ring structures. Wafer
bonding
temperature was varied between 300°C and 450°C, the used
bonding force was 3.5 kN under the ambient
pressure less than 1x10-3 mbar. The bonding quality was
evaluated with different seal ring metal structures and
bonding parameters
| Original language | English |
|---|---|
| Title of host publication | 2013 European Microelectronics Packaging Conference (EMPC) |
| Publisher | IEEE Institute of Electrical and Electronic Engineers |
| ISBN (Print) | 978-2-9527-4671-7 |
| Publication status | Published - 2013 |
| MoE publication type | A4 Article in a conference publication |
| Event | EMPC 2013: European Microelectronics and Packaging Conference - Grenoble, France Duration: 9 Sept 2013 → 12 Sept 2013 |
Conference
| Conference | EMPC 2013 |
|---|---|
| Country/Territory | France |
| City | Grenoble |
| Period | 9/09/13 → 12/09/13 |
Keywords
- Wafer level packaging
- gold-tin bonding
- copper-tin bonding
- SLID bonding
- MEMS encapsulation