Wafer-Level AuSn and CuSn Bonding for MEMS Encapsulation

Tommi Suni; Hongbo Xu; V. Vuorinen; Hannele Heikkinen; Sami Vähänen; Antti Jaakkola; Philippe Monnoyer; Mervi Paulasto-Kröckel

Wafer-Level AuSn and CuSn Bonding for MEMS Encapsulation

Tommi Suni
, Hongbo Xu
, V. Vuorinen
, Hannele Heikkinen
, Sami Vähänen
, Antti Jaakkola
, Philippe Monnoyer
, Mervi Paulasto-Kröckel

Aalto University
Advacam Oy

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

8 Citations (Scopus)

Abstract

In this work we have studied AuSn and CuSn Solid-Liquid Interdiffusion (SLID) bonding that can be used for wafer-level encapsulation. SLID bonding of these metal structures takes place at temperatures around 300°C but show higher re-melting temperatures because of the solid-liquid intermetallic phase transformation. 6'' silicon wafers were bonded with 60 ??m wide, electroplated, AuSn and CuSn seal ring structures. Wafer bonding temperature was varied between 300°C and 450°C, the used bonding force was 3.5 kN under the ambient pressure less than 1x10-3 mbar. The bonding quality was evaluated with different seal ring metal structures and bonding parameters

Original language	English
Title of host publication	2013 European Microelectronics Packaging Conference (EMPC)
Publisher	IEEE Institute of Electrical and Electronic Engineers
ISBN (Print)	978-2-9527-4671-7
Publication status	Published - 2013
MoE publication type	A4 Article in a conference publication
Event	EMPC 2013: European Microelectronics and Packaging Conference - Grenoble, France Duration: 9 Sept 2013 → 12 Sept 2013

Conference

Conference	EMPC 2013
Country/Territory	France
City	Grenoble
Period	9/09/13 → 12/09/13

Keywords

Wafer level packaging
gold-tin bonding
copper-tin bonding
SLID bonding
MEMS encapsulation

Access to Document

https://ieeexplore.ieee.org/document/6698598

Cite this

@inproceedings{0819c53a6a364953a3fcd1e57d5e45c9,

title = "Wafer-Level AuSn and CuSn Bonding for MEMS Encapsulation",

abstract = "In this work we have studied AuSn and CuSn Solid-Liquid Interdiffusion (SLID) bonding that can be used for wafer-level encapsulation. SLID bonding of these metal structures takes place at temperatures around 300°C but show higher re-melting temperatures because of the solid-liquid intermetallic phase transformation. 6'' silicon wafers were bonded with 60 ??m wide, electroplated, AuSn and CuSn seal ring structures. Wafer bonding temperature was varied between 300°C and 450°C, the used bonding force was 3.5 kN under the ambient pressure less than 1x10-3 mbar. The bonding quality was evaluated with different seal ring metal structures and bonding parameters",

keywords = "Wafer level packaging, gold-tin bonding, copper-tin bonding, SLID bonding, MEMS encapsulation",

author = "Tommi Suni and Hongbo Xu and V. Vuorinen and Hannele Heikkinen and Sami V{\"a}h{\"a}nen and Antti Jaakkola and Philippe Monnoyer and Mervi Paulasto-Kr{\"o}ckel",

note = "Project code: 76927; EMPC 2013 : European Microelectronics and Packaging Conference ; Conference date: 09-09-2013 Through 12-09-2013",

year = "2013",

language = "English",

isbn = "978-2-9527-4671-7",

booktitle = "2013 European Microelectronics Packaging Conference (EMPC)",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

Suni, T, Xu, H, Vuorinen, V, Heikkinen, H, Vähänen, S, Jaakkola, A, Monnoyer, P & Paulasto-Kröckel, M 2013, Wafer-Level AuSn and CuSn Bonding for MEMS Encapsulation. in 2013 European Microelectronics Packaging Conference (EMPC). IEEE Institute of Electrical and Electronic Engineers, EMPC 2013, Grenoble, France, 9/09/13. <https://ieeexplore.ieee.org/document/6698598>

TY - GEN

T1 - Wafer-Level AuSn and CuSn Bonding for MEMS Encapsulation

AU - Suni, Tommi

AU - Xu, Hongbo

AU - Vuorinen, V.

AU - Heikkinen, Hannele

AU - Vähänen, Sami

AU - Jaakkola, Antti

AU - Monnoyer, Philippe

AU - Paulasto-Kröckel, Mervi

N1 - Project code: 76927

PY - 2013

Y1 - 2013

N2 - In this work we have studied AuSn and CuSn Solid-Liquid Interdiffusion (SLID) bonding that can be used for wafer-level encapsulation. SLID bonding of these metal structures takes place at temperatures around 300°C but show higher re-melting temperatures because of the solid-liquid intermetallic phase transformation. 6'' silicon wafers were bonded with 60 ??m wide, electroplated, AuSn and CuSn seal ring structures. Wafer bonding temperature was varied between 300°C and 450°C, the used bonding force was 3.5 kN under the ambient pressure less than 1x10-3 mbar. The bonding quality was evaluated with different seal ring metal structures and bonding parameters

AB - In this work we have studied AuSn and CuSn Solid-Liquid Interdiffusion (SLID) bonding that can be used for wafer-level encapsulation. SLID bonding of these metal structures takes place at temperatures around 300°C but show higher re-melting temperatures because of the solid-liquid intermetallic phase transformation. 6'' silicon wafers were bonded with 60 ??m wide, electroplated, AuSn and CuSn seal ring structures. Wafer bonding temperature was varied between 300°C and 450°C, the used bonding force was 3.5 kN under the ambient pressure less than 1x10-3 mbar. The bonding quality was evaluated with different seal ring metal structures and bonding parameters

KW - Wafer level packaging

KW - gold-tin bonding

KW - copper-tin bonding

KW - SLID bonding

KW - MEMS encapsulation

M3 - Conference article in proceedings

SN - 978-2-9527-4671-7

BT - 2013 European Microelectronics Packaging Conference (EMPC)

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - EMPC 2013

Y2 - 9 September 2013 through 12 September 2013

ER -

Wafer-Level AuSn and CuSn Bonding for MEMS Encapsulation

Abstract

Conference

Keywords

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