Wafer Level Integration of Sub-THz and THz Systems

Vladimir Ermolov; Antti Lamminen; Jaakko Saarilahti; Mikko Varonen; Mikko Kantanen; Markku Lahti; Pekka Pursula

doi:10.1109/LMWT.2023.3341169

Wafer Level Integration of Sub-THz and THz Systems

Vladimir Ermolov^*, Antti Lamminen, Jaakko Saarilahti, Mikko Varonen, Mikko Kantanen, Markku Lahti, Pekka Pursula

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

Abstract

The letter presents a wafer level integration technology for sub-THz and THz systems. The developed integration process relies on deep reactive ion etching (DRIE) micromachining and Au-Au wafer bonding technology of silicon wafer substrates. The method allows integration of individual standard monolithic microwave integrated circuits (MMICs) of different technologies into the same Si package. The process includes only standard fabrication steps than can be automated. The integration process is scalable and cost efficient for future sub-THz and THz communication and sensing applications.

Original language	English
Pages (from-to)	187-190
Journal	IEEE Microwave and Wireless Technology Letters
Volume	34
Issue number	2
DOIs	https://doi.org/10.1109/LMWT.2023.3341169
Publication status	Published - 1 Feb 2024
MoE publication type	A1 Journal article-refereed

Funding

This work was supported in part by the Academy of Finland through Compact Millimeter Wave Radiometers (MilliRAD) under Grant 314542, in part by the TeraCom under Grant 319681, in part by the Millimeter-wave Integrated Circuit Development for Earth Remote Sensing, Radio Astronomy and Imaging Applications (MIDERI) Projects under Grant 310234, and in part by the Business Finland through TeraFront Project under Grant 8398/31/2022.

Keywords

Coplanar waveguides
Electromagnetic waveguides
Fabrication
Flip-chip devices
Integration
micromachining
Probes
Semiconductor device measurement
Silicon
terahertz (THz)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/LMWT.2023.3341169

Cite this

@article{c930476ef1204aec9507b3e45055e40a,

title = "Wafer Level Integration of Sub-THz and THz Systems",

abstract = "The letter presents a wafer level integration technology for sub-THz and THz systems. The developed integration process relies on deep reactive ion etching (DRIE) micromachining and Au-Au wafer bonding technology of silicon wafer substrates. The method allows integration of individual standard monolithic microwave integrated circuits (MMICs) of different technologies into the same Si package. The process includes only standard fabrication steps than can be automated. The integration process is scalable and cost efficient for future sub-THz and THz communication and sensing applications.",

keywords = "Coplanar waveguides, Electromagnetic waveguides, Fabrication, Flip-chip devices, Integration, micromachining, Probes, Semiconductor device measurement, Silicon, terahertz (THz)",

author = "Vladimir Ermolov and Antti Lamminen and Jaakko Saarilahti and Mikko Varonen and Mikko Kantanen and Markku Lahti and Pekka Pursula",

year = "2024",

month = feb,

day = "1",

doi = "10.1109/LMWT.2023.3341169",

language = "English",

volume = "34",

pages = "187--190",

journal = "IEEE Microwave and Wireless Technology Letters",

issn = "2771-957X",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

number = "2",

}

TY - JOUR

T1 - Wafer Level Integration of Sub-THz and THz Systems

AU - Ermolov, Vladimir

AU - Lamminen, Antti

AU - Saarilahti, Jaakko

AU - Varonen, Mikko

AU - Kantanen, Mikko

AU - Lahti, Markku

AU - Pursula, Pekka

PY - 2024/2/1

Y1 - 2024/2/1

N2 - The letter presents a wafer level integration technology for sub-THz and THz systems. The developed integration process relies on deep reactive ion etching (DRIE) micromachining and Au-Au wafer bonding technology of silicon wafer substrates. The method allows integration of individual standard monolithic microwave integrated circuits (MMICs) of different technologies into the same Si package. The process includes only standard fabrication steps than can be automated. The integration process is scalable and cost efficient for future sub-THz and THz communication and sensing applications.

AB - The letter presents a wafer level integration technology for sub-THz and THz systems. The developed integration process relies on deep reactive ion etching (DRIE) micromachining and Au-Au wafer bonding technology of silicon wafer substrates. The method allows integration of individual standard monolithic microwave integrated circuits (MMICs) of different technologies into the same Si package. The process includes only standard fabrication steps than can be automated. The integration process is scalable and cost efficient for future sub-THz and THz communication and sensing applications.

KW - Coplanar waveguides

KW - Electromagnetic waveguides

KW - Fabrication

KW - Flip-chip devices

KW - Integration

KW - micromachining

KW - Probes

KW - Semiconductor device measurement

KW - Silicon

KW - terahertz (THz)

UR - https://www.scopus.com/pages/publications/85181565852

U2 - 10.1109/LMWT.2023.3341169

DO - 10.1109/LMWT.2023.3341169

M3 - Article

AN - SCOPUS:85181565852

SN - 2771-957X

VL - 34

SP - 187

EP - 190

JO - IEEE Microwave and Wireless Technology Letters

JF - IEEE Microwave and Wireless Technology Letters

IS - 2

ER -

Wafer Level Integration of Sub-THz and THz Systems

Abstract

Funding

Keywords

UN SDGs

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