Wafer level MEMS encapsulation using SLID bonding

Tommi Suni, H Xu, Hannele Heikkinen, James Dekker, V Vuorinen, Antti Jaakkola, Philippe Monnoyer, M Paulasto-Kröckel

Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsScientific

Abstract

We have studied copper-tin and gold-tin solid-liquid interdiffusion bonding for MEMS encapsulation. Different electroplating processes, seal ring thicknesses and bonding processes were tested. Bonding quality was studied with cross sectional scanning electron microscopy.
Original languageEnglish
Title of host publicationBook of abstracts
Place of PublicationStockholm
Pages105-106
Publication statusPublished - 2013
MoE publication typeNot Eligible
EventInternational Conference on Wafer Bonding for MEMS Technologies and Wafer Level Integration, Waferbond'13 - Stockholm, Sweden
Duration: 5 Dec 20136 Dec 2013

Conference

ConferenceInternational Conference on Wafer Bonding for MEMS Technologies and Wafer Level Integration, Waferbond'13
Abbreviated titleWaferbond'13
CountrySweden
CityStockholm
Period5/12/136/12/13

Fingerprint

Encapsulation
MEMS
Tin
Interdiffusion (solids)
Electroplating
Gold
Seals
Copper
Scanning electron microscopy
Liquids

Keywords

  • MEMS packaging
  • SLID bonding

Cite this

Suni, T., Xu, H., Heikkinen, H., Dekker, J., Vuorinen, V., Jaakkola, A., ... Paulasto-Kröckel, M. (2013). Wafer level MEMS encapsulation using SLID bonding. In Book of abstracts (pp. 105-106). Stockholm.
Suni, Tommi ; Xu, H ; Heikkinen, Hannele ; Dekker, James ; Vuorinen, V ; Jaakkola, Antti ; Monnoyer, Philippe ; Paulasto-Kröckel, M. / Wafer level MEMS encapsulation using SLID bonding. Book of abstracts. Stockholm, 2013. pp. 105-106
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title = "Wafer level MEMS encapsulation using SLID bonding",
abstract = "We have studied copper-tin and gold-tin solid-liquid interdiffusion bonding for MEMS encapsulation. Different electroplating processes, seal ring thicknesses and bonding processes were tested. Bonding quality was studied with cross sectional scanning electron microscopy.",
keywords = "MEMS packaging, SLID bonding",
author = "Tommi Suni and H Xu and Hannele Heikkinen and James Dekker and V Vuorinen and Antti Jaakkola and Philippe Monnoyer and M Paulasto-Kr{\"o}ckel",
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Suni, T, Xu, H, Heikkinen, H, Dekker, J, Vuorinen, V, Jaakkola, A, Monnoyer, P & Paulasto-Kröckel, M 2013, Wafer level MEMS encapsulation using SLID bonding. in Book of abstracts. Stockholm, pp. 105-106, International Conference on Wafer Bonding for MEMS Technologies and Wafer Level Integration, Waferbond'13, Stockholm, Sweden, 5/12/13.

Wafer level MEMS encapsulation using SLID bonding. / Suni, Tommi; Xu, H; Heikkinen, Hannele; Dekker, James; Vuorinen, V; Jaakkola, Antti; Monnoyer, Philippe; Paulasto-Kröckel, M.

Book of abstracts. Stockholm, 2013. p. 105-106.

Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsScientific

TY - CHAP

T1 - Wafer level MEMS encapsulation using SLID bonding

AU - Suni, Tommi

AU - Xu, H

AU - Heikkinen, Hannele

AU - Dekker, James

AU - Vuorinen, V

AU - Jaakkola, Antti

AU - Monnoyer, Philippe

AU - Paulasto-Kröckel, M

N1 - Project code: 76927

PY - 2013

Y1 - 2013

N2 - We have studied copper-tin and gold-tin solid-liquid interdiffusion bonding for MEMS encapsulation. Different electroplating processes, seal ring thicknesses and bonding processes were tested. Bonding quality was studied with cross sectional scanning electron microscopy.

AB - We have studied copper-tin and gold-tin solid-liquid interdiffusion bonding for MEMS encapsulation. Different electroplating processes, seal ring thicknesses and bonding processes were tested. Bonding quality was studied with cross sectional scanning electron microscopy.

KW - MEMS packaging

KW - SLID bonding

M3 - Conference abstract in proceedings

SP - 105

EP - 106

BT - Book of abstracts

CY - Stockholm

ER -

Suni T, Xu H, Heikkinen H, Dekker J, Vuorinen V, Jaakkola A et al. Wafer level MEMS encapsulation using SLID bonding. In Book of abstracts. Stockholm. 2013. p. 105-106