Wafer-level transfer technologies for PZT-based RF MEMS switches

R. Guerre, U. Drechsler, D. Bhattacharyya, Pekka Rantakari, R. Stutz, R.V. Wright, Z.D. Milosavljevic, Tauno Vähä-Heikkilä, P.B. Kirby, M. Despont

Research output: Contribution to journalArticleScientificpeer-review

40 Citations (Scopus)

Abstract

We report on wafer-level transfer technologies to integrate PZT-based radio frequency (RF) microelectromechanical-systems switches on CMOS. Such heterogeneous integration can overcome the incompatibility of PZT material with back-end-of-the-line (BEOL) CMOS technology. The PZT stack and the transfer process have been optimized to avoid degradation of the PZT actuators during the transfer. In particular, we have optimized the seed layer for the growth of highly oriented PZT on a patterned TiO2-Pt layer, optimized the electrodes structure, and developed an Al2O3 capping layer to prevent degradation of PZT during the transfer process. A full wafer-level transfer process and a selective transfer technology allowing the distribution of RF switches from one source wafer to many receiving wafers has been demonstrated. The latest transfer process demonstrated exhibits great potential for cost optimization of wafer-level transfer of microdevices. In a separate experiment, we have demonstrated the BEOL CMOS compatibility of our integration technique. Switch characterization showed insertion loss of less than 0.5 dB and an isolation better than 30 dB for the 0.4- to 6-GHz frequency range with 15-V actuation voltage.
Original languageEnglish
Pages (from-to)548-560
Number of pages13
JournalJournal of Microelectromechanical Systems
Volume19
Issue number3
DOIs
Publication statusPublished - 2010
MoE publication typeA1 Journal article-refereed

Fingerprint

Technology transfer
MEMS
Switches
Degradation
Insertion losses
Seed
Actuators
Electrodes
Electric potential
Costs
Experiments

Keywords

  • heterogeneous integration
  • piezoelectric actuator
  • PZT
  • radio frequency (RF) microelectromechanical-systems
  • RF
  • MEMS
  • MEMS switch
  • wafer-level transfer
  • CMOS
  • RF CMOS

Cite this

Guerre, R., Drechsler, U., Bhattacharyya, D., Rantakari, P., Stutz, R., Wright, R. V., ... Despont, M. (2010). Wafer-level transfer technologies for PZT-based RF MEMS switches. Journal of Microelectromechanical Systems, 19(3), 548-560. https://doi.org/10.1109/JMEMS.2010.2047005
Guerre, R. ; Drechsler, U. ; Bhattacharyya, D. ; Rantakari, Pekka ; Stutz, R. ; Wright, R.V. ; Milosavljevic, Z.D. ; Vähä-Heikkilä, Tauno ; Kirby, P.B. ; Despont, M. / Wafer-level transfer technologies for PZT-based RF MEMS switches. In: Journal of Microelectromechanical Systems. 2010 ; Vol. 19, No. 3. pp. 548-560.
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abstract = "We report on wafer-level transfer technologies to integrate PZT-based radio frequency (RF) microelectromechanical-systems switches on CMOS. Such heterogeneous integration can overcome the incompatibility of PZT material with back-end-of-the-line (BEOL) CMOS technology. The PZT stack and the transfer process have been optimized to avoid degradation of the PZT actuators during the transfer. In particular, we have optimized the seed layer for the growth of highly oriented PZT on a patterned TiO2-Pt layer, optimized the electrodes structure, and developed an Al2O3 capping layer to prevent degradation of PZT during the transfer process. A full wafer-level transfer process and a selective transfer technology allowing the distribution of RF switches from one source wafer to many receiving wafers has been demonstrated. The latest transfer process demonstrated exhibits great potential for cost optimization of wafer-level transfer of microdevices. In a separate experiment, we have demonstrated the BEOL CMOS compatibility of our integration technique. Switch characterization showed insertion loss of less than 0.5 dB and an isolation better than 30 dB for the 0.4- to 6-GHz frequency range with 15-V actuation voltage.",
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Guerre, R, Drechsler, U, Bhattacharyya, D, Rantakari, P, Stutz, R, Wright, RV, Milosavljevic, ZD, Vähä-Heikkilä, T, Kirby, PB & Despont, M 2010, 'Wafer-level transfer technologies for PZT-based RF MEMS switches', Journal of Microelectromechanical Systems, vol. 19, no. 3, pp. 548-560. https://doi.org/10.1109/JMEMS.2010.2047005

Wafer-level transfer technologies for PZT-based RF MEMS switches. / Guerre, R.; Drechsler, U.; Bhattacharyya, D.; Rantakari, Pekka; Stutz, R.; Wright, R.V.; Milosavljevic, Z.D.; Vähä-Heikkilä, Tauno; Kirby, P.B.; Despont, M.

In: Journal of Microelectromechanical Systems, Vol. 19, No. 3, 2010, p. 548-560.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Wafer-level transfer technologies for PZT-based RF MEMS switches

AU - Guerre, R.

AU - Drechsler, U.

AU - Bhattacharyya, D.

AU - Rantakari, Pekka

AU - Stutz, R.

AU - Wright, R.V.

AU - Milosavljevic, Z.D.

AU - Vähä-Heikkilä, Tauno

AU - Kirby, P.B.

AU - Despont, M.

PY - 2010

Y1 - 2010

N2 - We report on wafer-level transfer technologies to integrate PZT-based radio frequency (RF) microelectromechanical-systems switches on CMOS. Such heterogeneous integration can overcome the incompatibility of PZT material with back-end-of-the-line (BEOL) CMOS technology. The PZT stack and the transfer process have been optimized to avoid degradation of the PZT actuators during the transfer. In particular, we have optimized the seed layer for the growth of highly oriented PZT on a patterned TiO2-Pt layer, optimized the electrodes structure, and developed an Al2O3 capping layer to prevent degradation of PZT during the transfer process. A full wafer-level transfer process and a selective transfer technology allowing the distribution of RF switches from one source wafer to many receiving wafers has been demonstrated. The latest transfer process demonstrated exhibits great potential for cost optimization of wafer-level transfer of microdevices. In a separate experiment, we have demonstrated the BEOL CMOS compatibility of our integration technique. Switch characterization showed insertion loss of less than 0.5 dB and an isolation better than 30 dB for the 0.4- to 6-GHz frequency range with 15-V actuation voltage.

AB - We report on wafer-level transfer technologies to integrate PZT-based radio frequency (RF) microelectromechanical-systems switches on CMOS. Such heterogeneous integration can overcome the incompatibility of PZT material with back-end-of-the-line (BEOL) CMOS technology. The PZT stack and the transfer process have been optimized to avoid degradation of the PZT actuators during the transfer. In particular, we have optimized the seed layer for the growth of highly oriented PZT on a patterned TiO2-Pt layer, optimized the electrodes structure, and developed an Al2O3 capping layer to prevent degradation of PZT during the transfer process. A full wafer-level transfer process and a selective transfer technology allowing the distribution of RF switches from one source wafer to many receiving wafers has been demonstrated. The latest transfer process demonstrated exhibits great potential for cost optimization of wafer-level transfer of microdevices. In a separate experiment, we have demonstrated the BEOL CMOS compatibility of our integration technique. Switch characterization showed insertion loss of less than 0.5 dB and an isolation better than 30 dB for the 0.4- to 6-GHz frequency range with 15-V actuation voltage.

KW - heterogeneous integration

KW - piezoelectric actuator

KW - PZT

KW - radio frequency (RF) microelectromechanical-systems

KW - RF

KW - MEMS

KW - MEMS switch

KW - wafer-level transfer

KW - CMOS

KW - RF CMOS

U2 - 10.1109/JMEMS.2010.2047005

DO - 10.1109/JMEMS.2010.2047005

M3 - Article

VL - 19

SP - 548

EP - 560

JO - Journal of Microelectromechanical Systems

JF - Journal of Microelectromechanical Systems

SN - 1057-7157

IS - 3

ER -