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Wafer scale conformality using Lateral High Aspect Ratio test structures
Oili M.E. Ylivaara
, Feng Gao
, Riikka, L. Puurunen
BA6201 RF microsystems
Aalto University
VTT (former employee or external)
Research output
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peer-review
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Keyphrases
3D Memory
20%
ALD Reactor
20%
Aluminum Oxide
20%
Aspect Ratio
40%
Conformal Thin Film
20%
Conformality
100%
Elemental Mapping
20%
Film Thickness
60%
Flow Design
20%
High Aspect Ratio
100%
High Aspect Ratio Structure
20%
Memory Application
20%
Metrology
20%
Multiple chips
20%
Penetration Depth
20%
Planar Surfaces
20%
Process Chamber
20%
Ratio Test
100%
Reactor Systems
20%
Reflectance Spectroscopy
20%
Repeatability
20%
Silicon chip
20%
Single chip
20%
Thin Film Fabrication
20%
Wafer
100%
Wafer Level
60%
Wafer-scale
100%
INIS
applications
20%
aspect ratio
100%
carriers
20%
compatibility
20%
design
20%
developers
20%
films
60%
geometry
20%
half-thickness
20%
information
40%
inspection
20%
levels
60%
manufacturers
20%
mapping
40%
metrology
20%
penetration depth
20%
precursor
20%
pulses
20%
reactors
40%
silicon
40%
surfaces
20%
testing
20%
thickness
60%
thin films
20%
tools
20%
values
20%
variations
40%
walls
20%
Engineering
Aspect Ratio
40%
Conformality
100%
Design Flow
20%
High Aspect Ratio
100%
Influencing Factor
20%
Penetration Depth
20%
Planar Surface
20%
Process Parameter
20%
Reactor System
20%
Repeatability
20%
Single Chip
20%
Test Structure
100%
Thin Films
20%
Material Science
Aluminum Oxide
33%
Film Thickness
100%
Silicon
66%
Surface (Surface Science)
33%
Thin Films
33%