Wafer scale encapsulation of MEMS by direct bonding

Tommi Suni, Kimmo Henttinen, James Dekker, Hannu Luoto, Martin Kulawski, Hannu Kattelus

Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsScientific

Abstract

We have developed methods for wafer level MEMS encapsulation by using low temperature direct bonding. Such packaging method is fast, provides a hermetic seal, does not require intermediate layers such as metals or adhesives and is IC-compatible. Strong bonding between the cap wafer and the device wafer can be obtained at temperatures below 200°C, which is than required in anodic bonding, and in direct bonding no high voltage is required. However, the problem in the direct bonding is that the surfaces to be bonded should be extremely clean and flat for spontaneous bonding to occur. For this purpose we have studied different methods for surface planarization and smoothing as well as for surface protection.
Original languageEnglish
Title of host publication16th Micromechanics Europe Workshop
Subtitle of host publicationBook of abstracts
Place of PublicationGöteborg
Pages119-122
Publication statusPublished - 2005
Event16th Micromechanics Europe Workshop, MME05 - Göteborg, Sweden
Duration: 4 Sep 20056 Sep 2005

Conference

Conference16th Micromechanics Europe Workshop, MME05
CountrySweden
CityGöteborg
Period4/09/056/09/05

Keywords

  • MEMS
  • wafer scale packaging
  • wafer bonding

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  • Cite this

    Suni, T., Henttinen, K., Dekker, J., Luoto, H., Kulawski, M., & Kattelus, H. (2005). Wafer scale encapsulation of MEMS by direct bonding. In 16th Micromechanics Europe Workshop: Book of abstracts (pp. 119-122).