Wafer scale encapsulation of MEMS by direct bonding

Tommi Suni; Kimmo Henttinen; James Dekker; Hannu Luoto; Martin Kulawski; Hannu Kattelus

Wafer scale encapsulation of MEMS by direct bonding

Tommi Suni, Kimmo Henttinen, James Dekker, Hannu Luoto, Martin Kulawski, Hannu Kattelus

Research output: Chapter in Book/Report/Conference proceeding › Conference abstract in proceedings › Scientific

Abstract

We have developed methods for wafer level MEMS encapsulation by using low temperature direct bonding. Such packaging method is fast, provides a hermetic seal, does not require intermediate layers such as metals or adhesives and is IC-compatible. Strong bonding between the cap wafer and the device wafer can be obtained at temperatures below 200°C, which is than required in anodic bonding, and in direct bonding no high voltage is required. However, the problem in the direct bonding is that the surfaces to be bonded should be extremely clean and flat for spontaneous bonding to occur. For this purpose we have studied different methods for surface planarization and smoothing as well as for surface protection.

Original language	English
Title of host publication	16th Micromechanics Europe Workshop
Subtitle of host publication	Book of abstracts
Place of Publication	Göteborg
Pages	119-122
Publication status	Published - 2005
Event	16th Micromechanics Europe Workshop, MME05 - Göteborg, Sweden Duration: 4 Sept 2005 → 6 Sept 2005

Conference

Conference	16th Micromechanics Europe Workshop, MME05
Country/Territory	Sweden
City	Göteborg
Period	4/09/05 → 6/09/05

Keywords

MEMS
wafer scale packaging
wafer bonding

Cite this

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title = "Wafer scale encapsulation of MEMS by direct bonding",

abstract = "We have developed methods for wafer level MEMS encapsulation by using low temperature direct bonding. Such packaging method is fast, provides a hermetic seal, does not require intermediate layers such as metals or adhesives and is IC-compatible. Strong bonding between the cap wafer and the device wafer can be obtained at temperatures below 200°C, which is than required in anodic bonding, and in direct bonding no high voltage is required. However, the problem in the direct bonding is that the surfaces to be bonded should be extremely clean and flat for spontaneous bonding to occur. For this purpose we have studied different methods for surface planarization and smoothing as well as for surface protection.",

keywords = "MEMS, wafer scale packaging, wafer bonding",

author = "Tommi Suni and Kimmo Henttinen and James Dekker and Hannu Luoto and Martin Kulawski and Hannu Kattelus",

note = "Project code: T5SU00314; 16th Micromechanics Europe Workshop, MME05 ; Conference date: 04-09-2005 Through 06-09-2005",

year = "2005",

language = "English",

isbn = "916-317-553-3",

pages = "119--122",

booktitle = "16th Micromechanics Europe Workshop",

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TY - CHAP

T1 - Wafer scale encapsulation of MEMS by direct bonding

AU - Suni, Tommi

AU - Henttinen, Kimmo

AU - Dekker, James

AU - Luoto, Hannu

AU - Kulawski, Martin

AU - Kattelus, Hannu

N1 - Project code: T5SU00314

PY - 2005

Y1 - 2005

N2 - We have developed methods for wafer level MEMS encapsulation by using low temperature direct bonding. Such packaging method is fast, provides a hermetic seal, does not require intermediate layers such as metals or adhesives and is IC-compatible. Strong bonding between the cap wafer and the device wafer can be obtained at temperatures below 200°C, which is than required in anodic bonding, and in direct bonding no high voltage is required. However, the problem in the direct bonding is that the surfaces to be bonded should be extremely clean and flat for spontaneous bonding to occur. For this purpose we have studied different methods for surface planarization and smoothing as well as for surface protection.

AB - We have developed methods for wafer level MEMS encapsulation by using low temperature direct bonding. Such packaging method is fast, provides a hermetic seal, does not require intermediate layers such as metals or adhesives and is IC-compatible. Strong bonding between the cap wafer and the device wafer can be obtained at temperatures below 200°C, which is than required in anodic bonding, and in direct bonding no high voltage is required. However, the problem in the direct bonding is that the surfaces to be bonded should be extremely clean and flat for spontaneous bonding to occur. For this purpose we have studied different methods for surface planarization and smoothing as well as for surface protection.

KW - MEMS

KW - wafer scale packaging

KW - wafer bonding

M3 - Conference abstract in proceedings

SN - 916-317-553-3

SP - 119

EP - 122

BT - 16th Micromechanics Europe Workshop

CY - Göteborg

T2 - 16th Micromechanics Europe Workshop, MME05

Y2 - 4 September 2005 through 6 September 2005

ER -

Wafer scale encapsulation of MEMS by direct bonding

Abstract

Conference

Keywords

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