Wafer scale packaging of MEMS by using plasma activated wafer bonding

Tommi Suni (Corresponding Author), Kimmo Henttinen, Antti Lipsanen, James Dekker, Hannu Luoto, Martin Kulawski

Research output: Contribution to journalArticleScientificpeer-review

18 Citations (Scopus)

Abstract

Plasma-assisted direct bonding has been investigated for wafer scale encapsulation of microelectromechanical systems (MEMS). Direct bonding requires smooth and flat wafer surfaces, which is seldom the case after fabrication of MEMS devices. Therefore, we have used polished chemical vapor deposited oxide as an intermediate bonding layer. The oxide layer is polished prior to bonding the MEMS wafer to cap silicon wafer. The bonding is carried out with plasma-assisted direct wafer bonding at a low temperature Formula . Two different methods to form electrical contacts to the encapsulated device are presented. In the first method trenches are etched on the surface of the cap wafer before the bonding. During the bonding the trenches are aligned to the contact pads of the device wafer. After bonding the cap wafer is thinned down with grinding until the path to the contact pads is opened. In the second method one or both of the wafers are thinned down to around Formula after bonding. The electrical path to contact pads is formed using V-groove sawing, metal sputtering, and lithography. To test the viability of the developed methods for MEMS encapsulation, we have sealed polysilicon resonator structures at a wafer level.
Original languageEnglish
Pages (from-to)G78-G82
Number of pages5
JournalJournal of the Electrochemical Society
Volume153
Issue number1
DOIs
Publication statusPublished - 2006
MoE publication typeA1 Journal article-refereed

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Wafer bonding
MEMS
Packaging
Plasmas
Encapsulation
Oxides
Sawing
Silicon wafers
Polysilicon
Lithography
Sputtering
Resonators
Metals
Vapors
Fabrication

Cite this

Suni, Tommi ; Henttinen, Kimmo ; Lipsanen, Antti ; Dekker, James ; Luoto, Hannu ; Kulawski, Martin. / Wafer scale packaging of MEMS by using plasma activated wafer bonding. In: Journal of the Electrochemical Society. 2006 ; Vol. 153, No. 1. pp. G78-G82.
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abstract = "Plasma-assisted direct bonding has been investigated for wafer scale encapsulation of microelectromechanical systems (MEMS). Direct bonding requires smooth and flat wafer surfaces, which is seldom the case after fabrication of MEMS devices. Therefore, we have used polished chemical vapor deposited oxide as an intermediate bonding layer. The oxide layer is polished prior to bonding the MEMS wafer to cap silicon wafer. The bonding is carried out with plasma-assisted direct wafer bonding at a low temperature Formula . Two different methods to form electrical contacts to the encapsulated device are presented. In the first method trenches are etched on the surface of the cap wafer before the bonding. During the bonding the trenches are aligned to the contact pads of the device wafer. After bonding the cap wafer is thinned down with grinding until the path to the contact pads is opened. In the second method one or both of the wafers are thinned down to around Formula after bonding. The electrical path to contact pads is formed using V-groove sawing, metal sputtering, and lithography. To test the viability of the developed methods for MEMS encapsulation, we have sealed polysilicon resonator structures at a wafer level.",
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Suni, T, Henttinen, K, Lipsanen, A, Dekker, J, Luoto, H & Kulawski, M 2006, 'Wafer scale packaging of MEMS by using plasma activated wafer bonding', Journal of the Electrochemical Society, vol. 153, no. 1, pp. G78-G82. https://doi.org/10.1149/1.2135209

Wafer scale packaging of MEMS by using plasma activated wafer bonding. / Suni, Tommi (Corresponding Author); Henttinen, Kimmo; Lipsanen, Antti; Dekker, James; Luoto, Hannu; Kulawski, Martin.

In: Journal of the Electrochemical Society, Vol. 153, No. 1, 2006, p. G78-G82.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Kulawski, Martin

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