Plasma assisted bonding is investigated for wafer scale encapsulation of MEMS. As direct bonding requires smooth and planar surfaces, CVD oxides are deposited on top of the structures and subsequently planarized by CMP. Care has to be taken in order to avoid rounding of the structures. This is done by a specially developed polishing sequence. Furthermore, two methods of forming electrical contacts to the devices are presented. Viability of the processes is done by testing of a sealed polysilicon resonator structure.
|Series||ECS Proceedings Volumes|
|Conference||8th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications|
|Period||15/05/05 → 20/05/05|
- wafer level packaging
- direct bonding
- plasma activation
- polysilicon resonator