Wafer scale packaging of MEMS by using plasma activated wafer bonding

Tommi Suni, Kimmo Henttinen, Antti Lipsanen, James Dekker, Hannu Luoto, Martin Kulawski

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    1 Citation (Scopus)

    Abstract

    Plasma assisted bonding is investigated for wafer scale encapsulation of MEMS. As direct bonding requires smooth and planar surfaces, CVD oxides are deposited on top of the structures and subsequently planarized by CMP. Care has to be taken in order to avoid rounding of the structures. This is done by a specially developed polishing sequence. Furthermore, two methods of forming electrical contacts to the devices are presented. Viability of the processes is done by testing of a sealed polysilicon resonator structure.
    Original languageEnglish
    Title of host publicationSemiconductor Wafer Bonding VIII: Science, Technology and Applications
    Subtitle of host publicationProceedings of the International Symposium
    PublisherElectrochemical Society ECS
    Pages173-183
    ISBN (Print)1-56677-460-8
    Publication statusPublished - 2005
    MoE publication typeA4 Article in a conference publication
    Event8th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications: Part of the 2005 Spring Meeting of the Electrochemical Society - Quebec City, Canada
    Duration: 15 May 200520 May 2005

    Publication series

    SeriesECS Proceedings Volumes
    Volume2005-02

    Conference

    Conference8th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications
    Country/TerritoryCanada
    CityQuebec City
    Period15/05/0520/05/05

    Keywords

    • wafer level packaging
    • direct bonding
    • plasma activation
    • polysilicon resonator
    • CMP
    • MEMS

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