Wet refinement of dry etched trenches in silicon

Hannu Kattelus

Research output: Contribution to journalArticleScientificpeer-review

5 Citations (Scopus)

Abstract

Deep trenches were etched in single‐crystalline silicon for isolation purposes using combined dry‐wet processing. Reactive ion etching was performed in chlorine‐nitrogen plasmas using chloroform, boron trichloride, or sulfur hexafluoride additives to optimize the trench profile. In all cases, however, imperfections such as barreling or micromasking‐induced trench bottom residue remained after dry etching. A significantly improved profile was obtained with the aid of an additional wet treatment of the dry etched trenches in tetramethyl ammonium hydroxide.

Original languageEnglish
Pages (from-to)3188 - 3191
Number of pages4
JournalJournal of the Electrochemical Society
Volume144
Issue number9
DOIs
Publication statusPublished - 1997
MoE publication typeA1 Journal article-refereed

Fingerprint

Sulfur Hexafluoride
Ammonium Hydroxide
Sulfur hexafluoride
Ammonium hydroxide
Barreling
Dry etching
Reactive ion etching
Silicon
Chloroform
Chlorine compounds
Boron
Plasmas
Defects
Processing
boron trichloride

Cite this

Kattelus, Hannu. / Wet refinement of dry etched trenches in silicon. In: Journal of the Electrochemical Society. 1997 ; Vol. 144, No. 9. pp. 3188 - 3191.
@article{023765bfe1084d78b0890883930de1da,
title = "Wet refinement of dry etched trenches in silicon",
abstract = "Deep trenches were etched in single‐crystalline silicon for isolation purposes using combined dry‐wet processing. Reactive ion etching was performed in chlorine‐nitrogen plasmas using chloroform, boron trichloride, or sulfur hexafluoride additives to optimize the trench profile. In all cases, however, imperfections such as barreling or micromasking‐induced trench bottom residue remained after dry etching. A significantly improved profile was obtained with the aid of an additional wet treatment of the dry etched trenches in tetramethyl ammonium hydroxide.",
author = "Hannu Kattelus",
year = "1997",
doi = "10.1149/1.1837981",
language = "English",
volume = "144",
pages = "3188 -- 3191",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
number = "9",

}

Wet refinement of dry etched trenches in silicon. / Kattelus, Hannu.

In: Journal of the Electrochemical Society, Vol. 144, No. 9, 1997, p. 3188 - 3191.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Wet refinement of dry etched trenches in silicon

AU - Kattelus, Hannu

PY - 1997

Y1 - 1997

N2 - Deep trenches were etched in single‐crystalline silicon for isolation purposes using combined dry‐wet processing. Reactive ion etching was performed in chlorine‐nitrogen plasmas using chloroform, boron trichloride, or sulfur hexafluoride additives to optimize the trench profile. In all cases, however, imperfections such as barreling or micromasking‐induced trench bottom residue remained after dry etching. A significantly improved profile was obtained with the aid of an additional wet treatment of the dry etched trenches in tetramethyl ammonium hydroxide.

AB - Deep trenches were etched in single‐crystalline silicon for isolation purposes using combined dry‐wet processing. Reactive ion etching was performed in chlorine‐nitrogen plasmas using chloroform, boron trichloride, or sulfur hexafluoride additives to optimize the trench profile. In all cases, however, imperfections such as barreling or micromasking‐induced trench bottom residue remained after dry etching. A significantly improved profile was obtained with the aid of an additional wet treatment of the dry etched trenches in tetramethyl ammonium hydroxide.

U2 - 10.1149/1.1837981

DO - 10.1149/1.1837981

M3 - Article

VL - 144

SP - 3188

EP - 3191

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 9

ER -