Wide-band radio frequency micro electro-mechanical systems switches and switching networks using a gallium arsenide monolithic microwave-integrated circuits foundry process technology

Pekka Rantakari (Corresponding Author), Robert Malmqvist, Carl Samuelsson, Rémy Leblanc, Derek Smith, Rolf Jonsson, Winfried Simon, Jan Saijets, Rens Baggen, Tauno Vähä-Heikkilä

Research output: Contribution to journalArticleScientificpeer-review

15 Citations (Scopus)

Abstract

In this study, the authors present the designs and experimental results of radio frequency (RF) micro electro-mechanical systems (MEMS) switches and switching circuits for gallium arsenide (GaAs)-based monolithic microwave-integrated circuits (MMIC). The switches and switching networks [single-pole single throw (SPST), single-pole double throw and double-pole double throw] are fabricated using OMMIC's GaAs MMIC foundry process technology. Measured results for a wide-band SPST switch design show isolation better than 20 dB up to 80 GHz with impedance matching better than -15 dB and insertion loss below 1.6 dB. Such low-loss GaAs-based RF MEMS switches are also capable of sustaining a power level of more than 10 W (up to 41 dBm) at 1 and 4 GHz, respectively, during cold-switching cycling conditions. Finally, to highlight the possibilities and benefits of monolithic integration of such MEMS switches and active RF devices on the same GaAs substrate, we present the experimental results of a wide-band (i.e. more than 10-40 GHz) GaAs MEMS-enabled switched low-noise amplifier circuit.
Original languageEnglish
Pages (from-to)948-955
Number of pages8
JournalIET Microwaves, Antennas and Propagation
Volume5
Issue number8
DOIs
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed

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Gallium arsenide
Switching networks
Monolithic microwave integrated circuits
Foundries
Switches
Poles
Switching circuits
Low noise amplifiers
Insertion losses
Networks (circuits)
Substrates

Cite this

@article{ecf5811e0e23408486cdec18f4070ffb,
title = "Wide-band radio frequency micro electro-mechanical systems switches and switching networks using a gallium arsenide monolithic microwave-integrated circuits foundry process technology",
abstract = "In this study, the authors present the designs and experimental results of radio frequency (RF) micro electro-mechanical systems (MEMS) switches and switching circuits for gallium arsenide (GaAs)-based monolithic microwave-integrated circuits (MMIC). The switches and switching networks [single-pole single throw (SPST), single-pole double throw and double-pole double throw] are fabricated using OMMIC's GaAs MMIC foundry process technology. Measured results for a wide-band SPST switch design show isolation better than 20 dB up to 80 GHz with impedance matching better than -15 dB and insertion loss below 1.6 dB. Such low-loss GaAs-based RF MEMS switches are also capable of sustaining a power level of more than 10 W (up to 41 dBm) at 1 and 4 GHz, respectively, during cold-switching cycling conditions. Finally, to highlight the possibilities and benefits of monolithic integration of such MEMS switches and active RF devices on the same GaAs substrate, we present the experimental results of a wide-band (i.e. more than 10-40 GHz) GaAs MEMS-enabled switched low-noise amplifier circuit.",
author = "Pekka Rantakari and Robert Malmqvist and Carl Samuelsson and R{\'e}my Leblanc and Derek Smith and Rolf Jonsson and Winfried Simon and Jan Saijets and Rens Baggen and Tauno V{\"a}h{\"a}-Heikkil{\"a}",
note = "Project code: 28964",
year = "2011",
doi = "10.1049/iet-map.2010.0434",
language = "English",
volume = "5",
pages = "948--955",
journal = "IET Microwaves, Antennas and Propagation",
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Wide-band radio frequency micro electro-mechanical systems switches and switching networks using a gallium arsenide monolithic microwave-integrated circuits foundry process technology. / Rantakari, Pekka (Corresponding Author); Malmqvist, Robert; Samuelsson, Carl; Leblanc, Rémy; Smith, Derek; Jonsson, Rolf; Simon, Winfried; Saijets, Jan; Baggen, Rens; Vähä-Heikkilä, Tauno.

In: IET Microwaves, Antennas and Propagation, Vol. 5, No. 8, 2011, p. 948-955.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Wide-band radio frequency micro electro-mechanical systems switches and switching networks using a gallium arsenide monolithic microwave-integrated circuits foundry process technology

AU - Rantakari, Pekka

AU - Malmqvist, Robert

AU - Samuelsson, Carl

AU - Leblanc, Rémy

AU - Smith, Derek

AU - Jonsson, Rolf

AU - Simon, Winfried

AU - Saijets, Jan

AU - Baggen, Rens

AU - Vähä-Heikkilä, Tauno

N1 - Project code: 28964

PY - 2011

Y1 - 2011

N2 - In this study, the authors present the designs and experimental results of radio frequency (RF) micro electro-mechanical systems (MEMS) switches and switching circuits for gallium arsenide (GaAs)-based monolithic microwave-integrated circuits (MMIC). The switches and switching networks [single-pole single throw (SPST), single-pole double throw and double-pole double throw] are fabricated using OMMIC's GaAs MMIC foundry process technology. Measured results for a wide-band SPST switch design show isolation better than 20 dB up to 80 GHz with impedance matching better than -15 dB and insertion loss below 1.6 dB. Such low-loss GaAs-based RF MEMS switches are also capable of sustaining a power level of more than 10 W (up to 41 dBm) at 1 and 4 GHz, respectively, during cold-switching cycling conditions. Finally, to highlight the possibilities and benefits of monolithic integration of such MEMS switches and active RF devices on the same GaAs substrate, we present the experimental results of a wide-band (i.e. more than 10-40 GHz) GaAs MEMS-enabled switched low-noise amplifier circuit.

AB - In this study, the authors present the designs and experimental results of radio frequency (RF) micro electro-mechanical systems (MEMS) switches and switching circuits for gallium arsenide (GaAs)-based monolithic microwave-integrated circuits (MMIC). The switches and switching networks [single-pole single throw (SPST), single-pole double throw and double-pole double throw] are fabricated using OMMIC's GaAs MMIC foundry process technology. Measured results for a wide-band SPST switch design show isolation better than 20 dB up to 80 GHz with impedance matching better than -15 dB and insertion loss below 1.6 dB. Such low-loss GaAs-based RF MEMS switches are also capable of sustaining a power level of more than 10 W (up to 41 dBm) at 1 and 4 GHz, respectively, during cold-switching cycling conditions. Finally, to highlight the possibilities and benefits of monolithic integration of such MEMS switches and active RF devices on the same GaAs substrate, we present the experimental results of a wide-band (i.e. more than 10-40 GHz) GaAs MEMS-enabled switched low-noise amplifier circuit.

U2 - 10.1049/iet-map.2010.0434

DO - 10.1049/iet-map.2010.0434

M3 - Article

VL - 5

SP - 948

EP - 955

JO - IET Microwaves, Antennas and Propagation

JF - IET Microwaves, Antennas and Propagation

SN - 1751-8725

IS - 8

ER -