Wide bandwidth nanowire electromechanics on insulating substrates at room temperature

T. S. Abhilash, John P. Mathew, Shamashis Sengupta, M. R. Gokhale, Arnab Bhattacharya, Mandar M. Deshmukh

Research output: Contribution to journalArticleScientificpeer-review

12 Citations (Scopus)

Abstract

We study InAs nanowire resonators fabricated on sapphire substrate with a local gate configuration. The key advantage of using an insulating sapphire substrate is that it results in a reduced parasitic capacitance, thus allowing both wide bandwidth actuation and detection using a network analyzer as well as signal detection at room temperature. Both in-plane and out-of-plane vibrational modes of the nanowire can be driven and the nonlinear response of the resonators studied. In addition, this technique enables the study of variation of thermal strains due to heating in nanostructures.

Original languageEnglish
Pages (from-to)6432-6435
Number of pages4
JournalNano Letters
Volume12
Issue number12
DOIs
Publication statusPublished - 12 Dec 2012
MoE publication typeA1 Journal article-refereed

Keywords

  • Nanowire
  • NEMS
  • rf electromechanics
  • sapphire

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    Abhilash, T. S., Mathew, J. P., Sengupta, S., Gokhale, M. R., Bhattacharya, A., & Deshmukh, M. M. (2012). Wide bandwidth nanowire electromechanics on insulating substrates at room temperature. Nano Letters, 12(12), 6432-6435. https://doi.org/10.1021/nl303804e