Wideband cryogenic on-wafer measurements at 20 - 295 K and 50-110 GHz

Tauno Vähä-Heikkilä (Corresponding author), Jussi Varis, Hannu Hakojärvi, Jussi Tuovinen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    1 Citation (Scopus)


    A measurement system has been developed for cryogenic on-wafer characterization at 50-110 GHz. The measurement system allows on-wafer S-parameter measurements of active and passive devices at this frequency range. The S-parameters of active devices can be measured as function of frequency, temperature, and bias conditions. As an example of cryogenic on-wafer measurements, measured S-parameters of InP HEMTs are presented with temperatures of 20, 80, 160, and 295 K and at 50-110 GHz frequency band.
    Original languageEnglish
    Title of host publicationProceedings of the 33rd European Microwave Conference 2003
    PublisherIEEE Institute of Electrical and Electronic Engineers
    ISBN (Print)1-58053-834-7
    Publication statusPublished - 2003
    MoE publication typeA4 Article in a conference publication
    Event33rd European Microwave Conference, EuMC 2003 - Munich, Germany
    Duration: 6 Oct 200310 Oct 2003


    Conference33rd European Microwave Conference, EuMC 2003


    • cryogenic
    • on-wafer measurements
    • HEMT


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