Wideband cryogenic on-wafer measurements at 20 - 295 K and 50-110 GHz

Tauno Vähä-Heikkilä (Corresponding author), Jussi Varis, Hannu Hakojärvi, Jussi Tuovinen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

1 Citation (Scopus)

Abstract

A measurement system has been developed for cryogenic on-wafer characterization at 50-110 GHz. The measurement system allows on-wafer S-parameter measurements of active and passive devices at this frequency range. The S-parameters of active devices can be measured as function of frequency, temperature, and bias conditions. As an example of cryogenic on-wafer measurements, measured S-parameters of InP HEMTs are presented with temperatures of 20, 80, 160, and 295 K and at 50-110 GHz frequency band.
Original languageEnglish
Title of host publicationProceedings of the 33rd European Microwave Conference 2003
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages1167-1170
ISBN (Print)1-58053-834-7
DOIs
Publication statusPublished - 2003
MoE publication typeA4 Article in a conference publication
Event33rd European Microwave Conference, EuMC 2003 - Munich, Germany
Duration: 6 Oct 200310 Oct 2003

Conference

Conference33rd European Microwave Conference, EuMC 2003
CountryGermany
CityMunich
Period6/10/0310/10/03

Keywords

  • cryogenic
  • on-wafer measurements
  • HEMT

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    Vähä-Heikkilä, T., Varis, J., Hakojärvi, H., & Tuovinen, J. (2003). Wideband cryogenic on-wafer measurements at 20 - 295 K and 50-110 GHz. In Proceedings of the 33rd European Microwave Conference 2003 (pp. 1167-1170). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/EUMA.2003.341147