Wideband cryogenic on-wafer measurements at 20 - 295 K and 50-110 GHz

Tauno Vähä-Heikkilä; Jussi Varis; Hannu Hakojärvi; Jussi Tuovinen

doi:10.1109/EUMA.2003.341147

Wideband cryogenic on-wafer measurements at 20 - 295 K and 50-110 GHz

Tauno Vähä-Heikkilä^*
, Jussi Varis
, Hannu Hakojärvi
, Jussi Tuovinen

^*Corresponding author for this work

VTT (former employee or external)

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

1 Citation (Scopus)

Abstract

A measurement system has been developed for cryogenic on-wafer characterization at 50-110 GHz. The measurement system allows on-wafer S-parameter measurements of active and passive devices at this frequency range. The S-parameters of active devices can be measured as function of frequency, temperature, and bias conditions. As an example of cryogenic on-wafer measurements, measured S-parameters of InP HEMTs are presented with temperatures of 20, 80, 160, and 295 K and at 50-110 GHz frequency band.

Original language	English
Title of host publication	Proceedings of the 33rd European Microwave Conference 2003
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	1167-1170
ISBN (Print)	1-58053-834-7
DOIs	https://doi.org/10.1109/EUMA.2003.341147
Publication status	Published - 2003
MoE publication type	A4 Article in a conference publication
Event	33rd European Microwave Conference, EuMC 2003 - Munich, Germany Duration: 6 Oct 2003 → 10 Oct 2003

Conference

Conference	33rd European Microwave Conference, EuMC 2003
Country/Territory	Germany
City	Munich
Period	6/10/03 → 10/10/03

Keywords

cryogenic
on-wafer measurements
HEMT

Access to Document

10.1109/EUMA.2003.341147

Cite this

@inproceedings{194939a466a84e659e56032cdf9bf12c,

title = "Wideband cryogenic on-wafer measurements at 20 - 295 K and 50-110 GHz",

abstract = "A measurement system has been developed for cryogenic on-wafer characterization at 50-110 GHz. The measurement system allows on-wafer S-parameter measurements of active and passive devices at this frequency range. The S-parameters of active devices can be measured as function of frequency, temperature, and bias conditions. As an example of cryogenic on-wafer measurements, measured S-parameters of InP HEMTs are presented with temperatures of 20, 80, 160, and 295 K and at 50-110 GHz frequency band.",

keywords = "cryogenic, on-wafer measurements, HEMT",

author = "Tauno V{\"a}h{\"a}-Heikkil{\"a} and Jussi Varis and Hannu Hakoj{\"a}rvi and Jussi Tuovinen",

year = "2003",

doi = "10.1109/EUMA.2003.341147",

language = "English",

isbn = "1-58053-834-7",

pages = "1167--1170",

booktitle = "Proceedings of the 33rd European Microwave Conference 2003",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "33rd European Microwave Conference, EuMC 2003 ; Conference date: 06-10-2003 Through 10-10-2003",

}

Vähä-Heikkilä, T , Varis, J, Hakojärvi, H & Tuovinen, J 2003, Wideband cryogenic on-wafer measurements at 20 - 295 K and 50-110 GHz. in Proceedings of the 33rd European Microwave Conference 2003. IEEE Institute of Electrical and Electronic Engineers, pp. 1167-1170, 33rd European Microwave Conference, EuMC 2003, Munich, Germany, 6/10/03. https://doi.org/10.1109/EUMA.2003.341147

Wideband cryogenic on-wafer measurements at 20 - 295 K and 50-110 GHz. / Vähä-Heikkilä, Tauno ; Varis, Jussi; Hakojärvi, Hannu et al.
Proceedings of the 33rd European Microwave Conference 2003. IEEE Institute of Electrical and Electronic Engineers, 2003. p. 1167-1170.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Wideband cryogenic on-wafer measurements at 20 - 295 K and 50-110 GHz

AU - Vähä-Heikkilä, Tauno

AU - Varis, Jussi

AU - Hakojärvi, Hannu

AU - Tuovinen, Jussi

PY - 2003

Y1 - 2003

N2 - A measurement system has been developed for cryogenic on-wafer characterization at 50-110 GHz. The measurement system allows on-wafer S-parameter measurements of active and passive devices at this frequency range. The S-parameters of active devices can be measured as function of frequency, temperature, and bias conditions. As an example of cryogenic on-wafer measurements, measured S-parameters of InP HEMTs are presented with temperatures of 20, 80, 160, and 295 K and at 50-110 GHz frequency band.

AB - A measurement system has been developed for cryogenic on-wafer characterization at 50-110 GHz. The measurement system allows on-wafer S-parameter measurements of active and passive devices at this frequency range. The S-parameters of active devices can be measured as function of frequency, temperature, and bias conditions. As an example of cryogenic on-wafer measurements, measured S-parameters of InP HEMTs are presented with temperatures of 20, 80, 160, and 295 K and at 50-110 GHz frequency band.

KW - cryogenic

KW - on-wafer measurements

KW - HEMT

U2 - 10.1109/EUMA.2003.341147

DO - 10.1109/EUMA.2003.341147

M3 - Conference article in proceedings

SN - 1-58053-834-7

SP - 1167

EP - 1170

BT - Proceedings of the 33rd European Microwave Conference 2003

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 33rd European Microwave Conference, EuMC 2003

Y2 - 6 October 2003 through 10 October 2003

ER -

Wideband cryogenic on-wafer measurements at 20 - 295 K and 50-110 GHz

Abstract

Conference

Keywords

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