WS2 and MoS2 thin film gas sensors with high response to NH3 in air at low temperature

Topias Järvinen; Gabriela S. Lorite; Jani Peräntie; Geza Toth; Simo Saarakkala; Vesa K. Virtanen; Krisztian Kordas

doi:10.1088/1361-6528/ab2d48

WS₂ and MoS₂ thin film gas sensors with high response to NH₃ in air at low temperature

Topias Järvinen, Gabriela S. Lorite, Jani Peräntie, Geza Toth, Simo Saarakkala, Vesa K. Virtanen, Krisztian Kordas (Corresponding Author)

University of Oulu

Research output: Contribution to journal › Article › Scientific › peer-review

71 Citations (Scopus)

Abstract

Transition metal dichalcogenides (TMDs) have received immense research interest in particular for their outstanding electrochemical and optoelectrical properties. Lately, chemical gas sensor applications of TMDs have been recognized as well owing to the low operating temperatures of devices, which is a great advantage over conventional metal oxide based sensors. In this work, we elaborate on the gas sensing properties of WS₂ and MoS₂ thin films made by simple and straightforward thermal sulfurization of sputter deposited metal films on silicon chips. The sensor response to H₂, H₂S, CO and NH₃ analytes in air at 30 °C has been assessed and both MoS₂ and WS₂ were found to have an excellent selectivity to NH₃ with a particularly high sensitivity of 0.10 0.02 ppm^-1 at sub-ppm concentrations in the case of WS₂. The sensing behavior is explained on the bases of gas adsorption energies as well as carrier (hole) localization induced by the surface adsorbed moieties having reductive nature.

Original language	English
Article number	405501
Number of pages	9
Journal	Nanotechnology
Volume	30
Issue number	40
DOIs	https://doi.org/10.1088/1361-6528/ab2d48
Publication status	Published - 18 Jul 2019
MoE publication type	A1 Journal article-refereed

Keywords

2D materials
gas sensors
MoS
NH3
room temperature sensing
WS

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@article{1a5e71fc0fbb499db6fafb59f1e22848,

title = "WS2 and MoS2 thin film gas sensors with high response to NH3 in air at low temperature",

abstract = "Transition metal dichalcogenides (TMDs) have received immense research interest in particular for their outstanding electrochemical and optoelectrical properties. Lately, chemical gas sensor applications of TMDs have been recognized as well owing to the low operating temperatures of devices, which is a great advantage over conventional metal oxide based sensors. In this work, we elaborate on the gas sensing properties of WS2 and MoS2 thin films made by simple and straightforward thermal sulfurization of sputter deposited metal films on silicon chips. The sensor response to H2, H2S, CO and NH3 analytes in air at 30 °C has been assessed and both MoS2 and WS2 were found to have an excellent selectivity to NH3 with a particularly high sensitivity of 0.10 0.02 ppm-1 at sub-ppm concentrations in the case of WS2. The sensing behavior is explained on the bases of gas adsorption energies as well as carrier (hole) localization induced by the surface adsorbed moieties having reductive nature.",

keywords = "2D materials, gas sensors, MoS, NH3, room temperature sensing, WS",

author = "Topias J{\"a}rvinen and Lorite, {Gabriela S.} and Jani Per{\"a}ntie and Geza Toth and Simo Saarakkala and Virtanen, {Vesa K.} and Krisztian Kordas",

year = "2019",

month = jul,

day = "18",

doi = "10.1088/1361-6528/ab2d48",

language = "English",

volume = "30",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "Institute of Physics IOP",

number = "40",

}

TY - JOUR

T1 - WS2 and MoS2 thin film gas sensors with high response to NH3 in air at low temperature

AU - Järvinen, Topias

AU - Lorite, Gabriela S.

AU - Peräntie, Jani

AU - Toth, Geza

AU - Saarakkala, Simo

AU - Virtanen, Vesa K.

AU - Kordas, Krisztian

PY - 2019/7/18

Y1 - 2019/7/18

N2 - Transition metal dichalcogenides (TMDs) have received immense research interest in particular for their outstanding electrochemical and optoelectrical properties. Lately, chemical gas sensor applications of TMDs have been recognized as well owing to the low operating temperatures of devices, which is a great advantage over conventional metal oxide based sensors. In this work, we elaborate on the gas sensing properties of WS2 and MoS2 thin films made by simple and straightforward thermal sulfurization of sputter deposited metal films on silicon chips. The sensor response to H2, H2S, CO and NH3 analytes in air at 30 °C has been assessed and both MoS2 and WS2 were found to have an excellent selectivity to NH3 with a particularly high sensitivity of 0.10 0.02 ppm-1 at sub-ppm concentrations in the case of WS2. The sensing behavior is explained on the bases of gas adsorption energies as well as carrier (hole) localization induced by the surface adsorbed moieties having reductive nature.

AB - Transition metal dichalcogenides (TMDs) have received immense research interest in particular for their outstanding electrochemical and optoelectrical properties. Lately, chemical gas sensor applications of TMDs have been recognized as well owing to the low operating temperatures of devices, which is a great advantage over conventional metal oxide based sensors. In this work, we elaborate on the gas sensing properties of WS2 and MoS2 thin films made by simple and straightforward thermal sulfurization of sputter deposited metal films on silicon chips. The sensor response to H2, H2S, CO and NH3 analytes in air at 30 °C has been assessed and both MoS2 and WS2 were found to have an excellent selectivity to NH3 with a particularly high sensitivity of 0.10 0.02 ppm-1 at sub-ppm concentrations in the case of WS2. The sensing behavior is explained on the bases of gas adsorption energies as well as carrier (hole) localization induced by the surface adsorbed moieties having reductive nature.

KW - 2D materials

KW - gas sensors

KW - MoS

KW - NH3

KW - room temperature sensing

KW - WS

UR - http://www.scopus.com/inward/record.url?scp=85071942936&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/ab2d48

DO - 10.1088/1361-6528/ab2d48

M3 - Article

AN - SCOPUS:85071942936

SN - 0957-4484

VL - 30

JO - Nanotechnology

JF - Nanotechnology

IS - 40

M1 - 405501

ER -

WS₂ and MoS₂ thin film gas sensors with high response to NH₃ in air at low temperature

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Keywords

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