WS2 and MoS2 thin film gas sensors with high response to NH3 in air at low temperature

Topias Järvinen, Gabriela S. Lorite, Jani Peräntie, Geza Toth, Simo Saarakkala, Vesa K. Virtanen, Krisztian Kordas (Corresponding Author)

    Research output: Contribution to journalArticleScientificpeer-review

    105 Citations (Scopus)


    Transition metal dichalcogenides (TMDs) have received immense research interest in particular for their outstanding electrochemical and optoelectrical properties. Lately, chemical gas sensor applications of TMDs have been recognized as well owing to the low operating temperatures of devices, which is a great advantage over conventional metal oxide based sensors. In this work, we elaborate on the gas sensing properties of WS2 and MoS2 thin films made by simple and straightforward thermal sulfurization of sputter deposited metal films on silicon chips. The sensor response to H2, H2S, CO and NH3 analytes in air at 30 °C has been assessed and both MoS2 and WS2 were found to have an excellent selectivity to NH3 with a particularly high sensitivity of 0.10 0.02 ppm-1 at sub-ppm concentrations in the case of WS2. The sensing behavior is explained on the bases of gas adsorption energies as well as carrier (hole) localization induced by the surface adsorbed moieties having reductive nature.

    Original languageEnglish
    Article number405501
    Number of pages9
    Issue number40
    Publication statusPublished - 18 Jul 2019
    MoE publication typeA1 Journal article-refereed


    • 2D materials
    • gas sensors
    • MoS
    • NH3
    • room temperature sensing
    • WS


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