ZnO for thin film BAW devices

Jyrki Molarius (Corresponding author), Tuomas Pensala, Arto Nurmela, Markku Ylilammi, A. Dommann

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    2 Citations (Scopus)


    As a test vehicle to measure the piezoelectricity of zinc oxide films, bulk acoustic wave (BAW) re-sonators were fabricated using standard microelectronics deposition, photolithography, and etching tech-niques on 100 mm Corning glass or silicon wafers. Resonators and filters were of solidly mounted re-sonator (SMR) type. The acoustic quarter wavelength mirror consisted of high and low acoustic impe-dance materials, which were either three pairs of molybdenum and silicon dioxide or two pairs of tungs-ten and silicon dioxide, respectively. Mirrors were designed for 1 and 2 GHz frequencies. Material pro-perties of the zinc oxide films have been studied by x-ray diffraction (including rocking curve), scanning electron microscopy and atomic force microscopy. Resonators were measured from 0.5 to 6 GHz using network analyzer. The highest acoustic coupling coefficient, K2 = 10.4% at 1.6 GHz, for thin film zinc oxide was achieved. Also a passband filter, fulfilling the complete E-GSM specifications, was fabricated using zinc oxide piezoelectric in the resonators.
    Original languageEnglish
    Title of host publicationProceedings of the IEEE Ultrasonics Symposium 2005
    PublisherIEEE Institute of Electrical and Electronic Engineers
    ISBN (Print)978-0-7803-9382-0
    Publication statusPublished - 2005
    MoE publication typeA4 Article in a conference publication
    EventIEEE Ultrasonics Symposium - Rotterdam, Netherlands
    Duration: 18 Sept 200521 Sept 2005

    Publication series

    SeriesProceedings - IEEE Ultrasonics Symposium


    ConferenceIEEE Ultrasonics Symposium


    • ZnO
    • BAW
    • FBAR
    • SMR
    • high acoustic coupling


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