ZnO for thin film BAW devices

Jyrki Molarius; Tuomas Pensala; Arto Nurmela; Markku Ylilammi; A. Dommann

doi:10.1109/ULTSYM.2005.1603221

ZnO for thin film BAW devices

Jyrki Molarius (Corresponding author), Tuomas Pensala, Arto Nurmela, Markku Ylilammi, A. Dommann

Centre Suisse d'Electronique et de Microtechnique S.A. (CSEM)

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

2 Citations (Scopus)

Abstract

As a test vehicle to measure the piezoelectricity of zinc oxide films, bulk acoustic wave (BAW) re-sonators were fabricated using standard microelectronics deposition, photolithography, and etching tech-niques on 100 mm Corning glass or silicon wafers. Resonators and filters were of solidly mounted re-sonator (SMR) type. The acoustic quarter wavelength mirror consisted of high and low acoustic impe-dance materials, which were either three pairs of molybdenum and silicon dioxide or two pairs of tungs-ten and silicon dioxide, respectively. Mirrors were designed for 1 and 2 GHz frequencies. Material pro-perties of the zinc oxide films have been studied by x-ray diffraction (including rocking curve), scanning electron microscopy and atomic force microscopy. Resonators were measured from 0.5 to 6 GHz using network analyzer. The highest acoustic coupling coefficient, K2 = 10.4% at 1.6 GHz, for thin film zinc oxide was achieved. Also a passband filter, fulfilling the complete E-GSM specifications, was fabricated using zinc oxide piezoelectric in the resonators.

Original language	English
Title of host publication	Proceedings of the IEEE Ultrasonics Symposium 2005
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	1816-1819
ISBN (Print)	978-0-7803-9382-0
DOIs	https://doi.org/10.1109/ULTSYM.2005.1603221
Publication status	Published - 2005
MoE publication type	A4 Article in a conference publication
Event	IEEE Ultrasonics Symposium - Rotterdam, Netherlands Duration: 18 Sept 2005 → 21 Sept 2005

Publication series

Series	Proceedings - IEEE Ultrasonics Symposium
Volume	2005
ISSN	1051-0117

Conference

Conference	IEEE Ultrasonics Symposium
Country/Territory	Netherlands
City	Rotterdam
Period	18/09/05 → 21/09/05

Keywords

ZnO
BAW
FBAR
SMR
high acoustic coupling

Access to Document

10.1109/ULTSYM.2005.1603221

Cite this

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title = "ZnO for thin film BAW devices",

abstract = "As a test vehicle to measure the piezoelectricity of zinc oxide films, bulk acoustic wave (BAW) re-sonators were fabricated using standard microelectronics deposition, photolithography, and etching tech-niques on 100 mm Corning glass or silicon wafers. Resonators and filters were of solidly mounted re-sonator (SMR) type. The acoustic quarter wavelength mirror consisted of high and low acoustic impe-dance materials, which were either three pairs of molybdenum and silicon dioxide or two pairs of tungs-ten and silicon dioxide, respectively. Mirrors were designed for 1 and 2 GHz frequencies. Material pro-perties of the zinc oxide films have been studied by x-ray diffraction (including rocking curve), scanning electron microscopy and atomic force microscopy. Resonators were measured from 0.5 to 6 GHz using network analyzer. The highest acoustic coupling coefficient, K2 = 10.4% at 1.6 GHz, for thin film zinc oxide was achieved. Also a passband filter, fulfilling the complete E-GSM specifications, was fabricated using zinc oxide piezoelectric in the resonators.",

keywords = "ZnO, BAW, FBAR, SMR, high acoustic coupling",

author = "Jyrki Molarius and Tuomas Pensala and Arto Nurmela and Markku Ylilammi and A. Dommann",

year = "2005",

doi = "10.1109/ULTSYM.2005.1603221",

language = "English",

isbn = "978-0-7803-9382-0",

series = "Proceedings - IEEE Ultrasonics Symposium",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

pages = "1816--1819",

booktitle = "Proceedings of the IEEE Ultrasonics Symposium 2005",

address = "United States",

note = "IEEE Ultrasonics Symposium ; Conference date: 18-09-2005 Through 21-09-2005",

}

Molarius, J, Pensala, T, Nurmela, A, Ylilammi, M & Dommann, A 2005, ZnO for thin film BAW devices. in Proceedings of the IEEE Ultrasonics Symposium 2005. IEEE Institute of Electrical and Electronic Engineers, Proceedings - IEEE Ultrasonics Symposium, vol. 2005, pp. 1816-1819, IEEE Ultrasonics Symposium, Rotterdam, Netherlands, 18/09/05. https://doi.org/10.1109/ULTSYM.2005.1603221

ZnO for thin film BAW devices. / Molarius, Jyrki (Corresponding author); Pensala, Tuomas; Nurmela, Arto et al.
Proceedings of the IEEE Ultrasonics Symposium 2005. IEEE Institute of Electrical and Electronic Engineers, 2005. p. 1816-1819 (Proceedings - IEEE Ultrasonics Symposium, Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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AU - Molarius, Jyrki

AU - Pensala, Tuomas

AU - Nurmela, Arto

AU - Ylilammi, Markku

AU - Dommann, A.

PY - 2005

Y1 - 2005

N2 - As a test vehicle to measure the piezoelectricity of zinc oxide films, bulk acoustic wave (BAW) re-sonators were fabricated using standard microelectronics deposition, photolithography, and etching tech-niques on 100 mm Corning glass or silicon wafers. Resonators and filters were of solidly mounted re-sonator (SMR) type. The acoustic quarter wavelength mirror consisted of high and low acoustic impe-dance materials, which were either three pairs of molybdenum and silicon dioxide or two pairs of tungs-ten and silicon dioxide, respectively. Mirrors were designed for 1 and 2 GHz frequencies. Material pro-perties of the zinc oxide films have been studied by x-ray diffraction (including rocking curve), scanning electron microscopy and atomic force microscopy. Resonators were measured from 0.5 to 6 GHz using network analyzer. The highest acoustic coupling coefficient, K2 = 10.4% at 1.6 GHz, for thin film zinc oxide was achieved. Also a passband filter, fulfilling the complete E-GSM specifications, was fabricated using zinc oxide piezoelectric in the resonators.

AB - As a test vehicle to measure the piezoelectricity of zinc oxide films, bulk acoustic wave (BAW) re-sonators were fabricated using standard microelectronics deposition, photolithography, and etching tech-niques on 100 mm Corning glass or silicon wafers. Resonators and filters were of solidly mounted re-sonator (SMR) type. The acoustic quarter wavelength mirror consisted of high and low acoustic impe-dance materials, which were either three pairs of molybdenum and silicon dioxide or two pairs of tungs-ten and silicon dioxide, respectively. Mirrors were designed for 1 and 2 GHz frequencies. Material pro-perties of the zinc oxide films have been studied by x-ray diffraction (including rocking curve), scanning electron microscopy and atomic force microscopy. Resonators were measured from 0.5 to 6 GHz using network analyzer. The highest acoustic coupling coefficient, K2 = 10.4% at 1.6 GHz, for thin film zinc oxide was achieved. Also a passband filter, fulfilling the complete E-GSM specifications, was fabricated using zinc oxide piezoelectric in the resonators.

KW - ZnO

KW - BAW

KW - FBAR

KW - SMR

KW - high acoustic coupling

U2 - 10.1109/ULTSYM.2005.1603221

DO - 10.1109/ULTSYM.2005.1603221

M3 - Conference article in proceedings

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T3 - Proceedings - IEEE Ultrasonics Symposium

SP - 1816

EP - 1819

BT - Proceedings of the IEEE Ultrasonics Symposium 2005

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - IEEE Ultrasonics Symposium

Y2 - 18 September 2005 through 21 September 2005

ER -

ZnO for thin film BAW devices

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